Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxy

被引：25

作者：

Chen, WK ^{[1
]}

Pan, YC ^{[1
]}

Lin, HC ^{[1
]}

Ou, J ^{[1
]}

Chen, WH ^{[1
]}

Lee, MC ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 12B期

关键词：

InN; MOVPE;

D O I：

10.1143/JJAP.36.L1625

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the successful growth of an InN film by metalorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375 degrees C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec: which explains the superior crystalline quality of our epitaxial film.

引用

页码：L1625 / L1627

页数：3

共 50 条

[21] Metalorganic vapor phase epitaxy of GaN, InN, and AlGaN using 1,1-dimethylhydrazine as a nitrogen source [J].

Funato, Mitsuru ;

Ujita, Shinji ;

Kawakami, Yoichi .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (10A) :6767-6772

[22] Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy [J].

Zhang, Yuantao ;

Kimura, Takeshi ;

Prasertusk, Kiattiwut ;

Iwabuchi, Takuya ;

Kumar, Suresh ;

Liu, Yuhuai ;

Katayama, Ryuji ;

Matsuoka, Takashi .

THIN SOLID FILMS, 2013, 536 :152-155

[23] Influence of growth temperature on the twin formation of InN{10(1)over-bar3} on GaAs(110) by metalorganic vapor phase epitaxy [J].

Murakami, Hisashi ;

Cho, Hyun-Chol ;

Suematsu, Mayu ;

Inaba, Katsuhiko ;

Kumagai, Yoshinao ;

Koukitu, Akinori .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4) :677-680

[24] Growth behavior of nonpolar ZnO on M-plane and R-plane sapphire by metalorganic vapor phase epitaxy [J].

Moriyama, T ;

Fujita, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (11) :7919-7921

[25] Patterned growth of (AlGa)As using metalorganic vapor-phase epitaxy [J].

Hofmann, L ;

Knauer, A ;

Rechenberg, I ;

Weyers, M ;

Stolz, W .

JOURNAL OF CRYSTAL GROWTH, 1999, 206 (04) :255-262

[26] Growth characteristics of CdZnTe layers in metalorganic vapor-phase epitaxy [J].

Yasuda, K ;

Araki, N ;

Samion, HB ;

Miyata, M .

JOURNAL OF CRYSTAL GROWTH, 2000, 214 :19-24

[27] Selective growth of GaN/AlGaN microstructures by metalorganic vapor phase epitaxy [J].

Kato, T ;

Honda, Y ;

Kawaguchi, Y ;

Yamaguchi, M ;

Sawaki, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (3B) :1896-1898

[28] Growth and characterization of cubic-CdS layers on (100) GaAs in metalorganic vapor-phase epitaxy [J].

Yasuda, K ;

Samion, HB ;

Miyata, M ;

Araki, N ;

Masuda, Y ;

Tomita, Y .

JOURNAL OF CRYSTAL GROWTH, 2001, 222 (03) :477-481

[29] In situ X-ray diffraction monitoring of GalnN/GaN superlattice during organometalic vapor phase epitaxy growth [J].

Yamamoto, Taiji ;

Iida, Daisuke ;

Kondo, Yasunari ;

Sowa, Mihoko ;

Umeda, Shinya ;

Iwaya, Motoaki ;

Takeuchi, Tetsuya ;

Kamiyama, Satoshi ;

Akasaki, Isamu .

JOURNAL OF CRYSTAL GROWTH, 2014, 393 :108-113

[30] Characterization of Quaternary AlxGa1-(x+y)InyN (x ≈ 0.5 and y ≤ 0.12) Metalorganic Vapor Phase Epitaxy Growth Focusing on Unintentionally Incorporated Impurities [J].

Yamada, Yuto ;

Kumabe, Takeru ;

Watanabe, Hirotaka ;

Nitta, Shugo ;

Honda, Yoshio ;

Amano, Hiroshi .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2025,

← 1 2 3 4 5 →