Simplified analytical model and high power characteristics of InGaP/GaAs HBTs at X-band

被引：0

作者：

Park, Jae-Woo ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Elect Engn & Comp Sci Dept, Taejon 305701, South Korea

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2007年 / 17卷 / 03期

关键词：

analytical model; InGaP heterojunction bipolar transistors (HBTs); large-signal parameters; power density; X-band;

D O I：

10.1109/LMWC.2006.890490

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Simplified large-signal analysis and high power characterization of InGaP/GaAs heterojunction bipolar transistors (HBTs) at X-band are reported. The simplified analytical model suggested in this work allows a first order prediction of the power performance trends as functions of device physical parameters. The solution to nonlinear equations governing the large signal behavior of the transistor is found by an iterative approach. The impact of different large signal parameters on the power performance of HBTs has been analyzed. Under class B operation, a 10-finger 2 x 20 mu m(2) HBT at V-CE = 10 V achieves a maximum output power of 1.08 W (5.4 W/mm) with power-added efficiency of 44%.

引用

页码：214 / 216

页数：3