Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxides

被引：0

作者：

Monsieur, F ^{[1
]}

Vincent, E ^{[1
]}

Ribes, G ^{[1
]}

Huard, V ^{[1
]}

Bruyère, S ^{[1
]}

Roy, D ^{[1
]}

Pananakakis, G ^{[1
]}

Ghibaudo, G ^{[1
]}

机构：

[1] STMicroelect, Cent R&D Labs, F-38926 Crolles, France

来源：

2002 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP - FINAL REPORT | 2002年

关键词：

ultra-thin oxides; conduction path; wearout; runaway; progressiveness; stored energy; generation rate; delay;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper considers the physical mechanisms responsible for the progressive (i.e. smooth or noisy) breakdown manifestation commonly measured on ultra-thin oxides (Tox<25Angstrom). First, it is verified that the theory previously published is relevant by highlighting progressive behavior predicted on thicker oxides (50Angstrom). Second, the stored energy is shown not to be correlated to the progressive behavior even if it influences the failure and its occurrence. At last, the progressiveness being gate voltage and temperature driven, it is stated that the defect generation probability drives the breakdown degradation after its creation. This is proven by measuring the influence on the progressiveness of a bulk bias applied during the stress of a pMOS in the inversion regime.

引用

页码：1 / 8

页数：8

共 16 条

[1] Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxides
Monsieur, F
Vincent, E
Ribes, G
Huard, V
Bruyère, S
Roy, D
Pananakakis, G
Ghibaudo, G
41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2003, : 424 - 431
[2] Wear-out and breakdown of ultra-thin gate oxides after irradiation
Cester, A
ELECTRONICS LETTERS, 2002, 38 (19) : 1137 - 1139
[3] DEFECT DYNAMICS AND WEAR-OUT IN THIN SILICON-OXIDES
FARMER, KR
BUHRMAN, RA
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (12) : 1084 - 1105
[4] Degradation of ultra-thin oxides with tungsten gates under high voltage: Wear-out and breakdown transient
Palumbo, F
Lombardo, S
Stathis, JH
Narayanan, V
McFeely, FR
Yurkas, JJ
2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 2004, : 122 - 125
[5] Body effect induced wear-out acceleration in ultra-thin oxides
Bruyère, S
Roy, D
Robilliart, E
Vincent, E
Ghibaudo, G
MICROELECTRONICS RELIABILITY, 2001, 41 (07) : 1031 - 1034
[6] Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides
Pompl, T.
Kerber, A.
Roehner, M.
Kerber, M.
MICROELECTRONICS RELIABILITY, 2006, 46 (9-11) : 1603 - 1607
[7] Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides
Monsieur, F
Vincent, E
Pananakakis, G
Ghibaudo, G
MICROELECTRONICS RELIABILITY, 2001, 41 (07) : 1035 - 1039
[8] WEAR-OUT OF ULTRA-THIN GATE OXIDES DURING HIGH-FIELD ELECTRON-TUNNELING
DEPAS, M
VERMEIRE, B
MARTENS, PW
MEURIS, M
HEYNS, MM
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (06) : 753 - 758
[9] Statistical model for radiation-induced wear-out of ultra-thin gate oxides after exposure to heavy ion irradiation
Cester, A
Cimino, S
Miranda, E
Candelori, A
Ghidini, G
Paccagnella, A
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (06) : 2167 - 2175
[10] New Insights into wear-out mechanisms of ultra-thin silicon dioxide gate dielectrics
Anon
Journal of Research of the National Institute of Standards and Technology, 2001, 106 (02)

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