InAs/GaAs-(001) quantum dots close to thermodynamic equilibrium

被引：41

作者：

Costantini, G ^{[1
]}

Manzano, C ^{[1
]}

Songmuang, R ^{[1
]}

Schmidt, OG ^{[1
]}

Kern, K ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 19期

关键词：

D O I：

10.1063/1.1572534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs/GaAs(001) quantum dots are grown at high temperature and extremely low flux and analyzed by in situ scanning tunneling microscopy. A bimodal distribution of dots is observed, composed of "small'' and "large'' islands. While the former show a broad distribution of sizes and shapes, the latter appear to be highly uniform and have a truncated pyramid shape with irregular octagonal base. (110) and (111) facets are identified and atomically resolved showing (1x1) and (2x2) surface reconstructions, respectively. The shape of the large quantum dots is in excellent agreement with recent theoretical predictions, proving that the chosen deposition conditions are close to thermodynamic equilibrium. (C) 2003 American Institute of Physics.

引用

页码：3194 / 3196

页数：3

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