Determination of the band-gap of MgS and MgS-rich Zn1-xMgxSySe1-y alloys from optical transmission measurements

被引：10

作者：

Davidson, Ian A. ^{[1
]}

Moug, Richard T. ^{[1
]}

Izdebski, Frauke ^{[1
]}

Bradford, Christine ^{[1
]}

Prior, Kevin A. ^{[1
]}

机构：

[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2010年 / 247卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

II-VI semiconductors; absorption spectra; X-ray diffraction; GROWTH; LAYERS;

D O I：

10.1002/pssb.200983190

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

As part of our development of an epitaxial lift-off process, utilising a sacrificial magnesium sulphide (MgS) layer, we have developed a MgS-rich ZnMgSSe alloy which provides excellent carrier confinement and resists both oxidation and acid attack. Here the optical transmission of the alloy has been measured and its bandgap determined as a direct transition at 4.19 +/- 0.04 eV. Its composition has also been determined by X-ray interference (XRI) and comparison with simulations. For a range of alloy samples we obtain compositions of the Zn1-xMgxSySe1-y layers which are (x, y) = (0.80 +/- 0.02, 0.645 +/- 0.025). Using the alloy bandgap and composition we have determined direct bandgap transition energy for MgS by extrapolation. This is found to be 4.78 +/- 0.14 eV. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1396 / 1398

页数：3

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