Modification of graphene by ion beam

被引：26
作者：
Gawlik, G. [1 ]
Ciepielewski, P. [1 ]
Jagielski, J. [1 ]
Baranowski, J. [1 ]
机构：
[1] Inst Elect Mat Technol, Wolczynska 133, PL-01919 Warsaw, Poland
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2017年 / 406卷
关键词：
Graphene; Ion; Defect; Raman; SINGLE-LAYER GRAPHENE; RAMAN-SPECTROSCOPY; IRRADIATION; TRANSPORT; DEFECTS;
D O I：
10.1016/j.nimb.2017.04.054
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Ion induced defect generation in graphene was analyzed using Raman spectroscopy. A single layer graphene membrane produced by chemical vapor deposition (CVD) on copper foil and then transferred on glass substrate was subjected to helium, carbon, nitrogen, argon and krypton ions bombardment at energies from the range 25 key to 100 keV. A density of ion induced defects and theirs mean size were estimated by using Raman measurements. Increasing number of defects generated by ion with increase of ion mass and decrease of ion energy was observed. Dependence of ion defect efficiency (defects/ion) on ion mass end energy was proportional to nuclear stopping power simulated by SRIM. No correlation between ion defect efficiency and electronic stopping power was observed. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：683 / 688
页数：6
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