Crystallinity improvement of Hg1-xCdxTe films grown by a liquid-phase epitaxial technique

被引：0

作者：

Li, B ^{[1
]}

Zhang, XP ^{[1
]}

Zhu, JQ ^{[1
]}

Chu, JH ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷

关键词：

Hg1-xCdxTe; crystallinity; liquid-phase epitaxy; meltetch;

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Work was done, with emphasis on modifying substrate orientation and liquid-phase epitaxy (LPE) mode, to improve the crystallinity of Hg1-xCdxTe epitaxial layers. The results show that the epilayers grown on the 1.2 degrees-2 degrees off (1 1 1)A substrate exhibit better crystal quality and fewer Te precipitates than those grown on other tilted substrates. Further, an adequate meltetch of substrate before LPE provides a fresh surface for epitaxial growth, while a meltetch of the epilayer at the end of LPE prevents spurious growth and melt sticking. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：1242 / 1246

页数：5

共 45 条

[41] Growth of Pb1-xSnxTe (x ≈ 0.12) epitaxial layers by temperature difference under controlled vapor pressure liquid-phase epitaxy
Nugraha
Tamura, W
Itoh, O
Suto, K
Nishizawa, J
JOURNAL OF CRYSTAL GROWTH, 2000, 219 (1-2) : 32 - 39
[42] High-quality Ga1-xInxAsySb1-y quaternary layers grown from antimonide-rich solutions by liquid-phase epitaxy
Wang, JM
Sun, YM
Wu, MC
JOURNAL OF CRYSTAL GROWTH, 1997, 172 (3-4) : 514 - 520
[43] Structural and compositional analysis of InBixAsySb(1-x-y) films grown on GaAs(001) substrates by liquid phase epitaxy
Dixit, VK
Keerthi, KS
Bhat, HL
Bera, P
Hegde, MS
APPLIED SURFACE SCIENCE, 2003, 220 (1-4) : 321 - 326
[44] Structural and electrical properties of liquid phase epitaxially grown Y1Ba2Cu3Ox films
Miura, S
Hashimoto, K
Wang, F
Enomoto, Y
Morishita, T
PHYSICA C, 1997, 278 (3-4): : 201 - 206
[45] YBa2Cu3O7-δ/NdBa2(CU1-xNix)3O7-δ double layers by liquid-phase epitaxial growth
Yao, X
Izumi, T
Hobara, N
Nakamura, Y
Izumi, T
Shiohara, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (3B): : L266 - L268

← 1 2 3 4 5 →