Crystallinity improvement of Hg1-xCdxTe films grown by a liquid-phase epitaxial technique

被引：0
|
作者：
Li, B [1 ]
Zhang, XP [1 ]
Zhu, JQ [1 ]
Chu, JH [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷
关键词：
Hg1-xCdxTe; crystallinity; liquid-phase epitaxy; meltetch;
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Work was done, with emphasis on modifying substrate orientation and liquid-phase epitaxy (LPE) mode, to improve the crystallinity of Hg1-xCdxTe epitaxial layers. The results show that the epilayers grown on the 1.2 degrees-2 degrees off (1 1 1)A substrate exhibit better crystal quality and fewer Te precipitates than those grown on other tilted substrates. Further, an adequate meltetch of substrate before LPE provides a fresh surface for epitaxial growth, while a meltetch of the epilayer at the end of LPE prevents spurious growth and melt sticking. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1242 / 1246
页数：5
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