Homogeneous linewidth of the direct exciton in a type-II ZnSe/BeTe quantum well

被引：20
|
作者：
Platonov, AV
Yakovlev, DR [1 ]
Zehnder, U
Kochereshko, VP
Ossau, W
Fischer, F
Litz, T
Waag, A
Landwehr, G
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷
基金：
俄罗斯基础研究基金会;
关键词：
beryllium chalcogenides; type-II quantum wells; exciton linewidth;
D O I：
10.1016/S0022-0248(98)80166-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We present an optical study of novel ZnSe/BeTe heterostructures with a type-II band alignment based on beryllium chalcogenides. A. strong exciton transition involving a confined electron and a quasibound hole state (both in the ZnSe layer) is observed in photoluminescence, photoluminescence excitation and reflectivity spectra. This exciton state is drastically broadened by increasing temperature due to enhanced exciton-acoustic phonon interaction. Pronounced features related to the quasibound hole states in the ZnSe layer (upto n = 4) are detected. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：801 / 805
页数：5
相关论文
共 15 条
  • [1] Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells
    Ji Zi-Wu
    Zheng Yu-Jun
    Xu Xian-Gang
    CHINESE PHYSICS B, 2010, 19 (11)
  • [2] Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells
    冀子武
    郑雨军
    徐现刚
    Chinese Physics B, 2010, (11) : 588 - 591
  • [3] Linewidth enhancement factor of type-II red InGaN/GaNSb/GaN quantum-well lasers
    Park, Seoung-Hwan
    Shim, Jong-In
    Shin, Dong-Soo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (07)
  • [4] Type-II quantum cascade lasers
    Yang, RQ
    Lin, CH
    Yang, BH
    Zhang, D
    Murry, SJ
    Pei, SS
    Bewley, WW
    Olafsen, LJ
    Aifer, EH
    Felix, CL
    Vurgaftman, I
    Meyer, JR
    IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MID-INFRARED II, 1998, 3284 : 308 - 317
  • [5] High-temperature mid-IR type-II quantum well lasers
    Meyer, JR
    Felix, CL
    Malin, JI
    Vurgaftman, I
    Hoffman, CA
    Lin, CH
    Chang, PC
    Murry, SJ
    Yang, RQ
    Pei, SS
    RamMohan, LR
    IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MIDINFRARED, 1997, 3001 : 309 - 320
  • [6] Reanalysis of energy band structure in the type-II quantum wells
    Li, Xinxin
    Deng, Zhen
    Jiang, Yang
    Du, Chunhua
    Jia, Haiqiang
    Wang, Wenxin
    Chen, Hong
    CHINESE PHYSICS B, 2024, 33 (06)
  • [7] Effects of electric field on the exciton linewidth broadening due to scattering by free carriers in semiconducting quantum-well structures
    Koh, TS
    Feng, YP
    Spector, HN
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (10) : 1774 - 1778
  • [8] A ZnSe/BeTe p-grading superlattice with a low voltage drop for efficient hole injection in green-yellow BeZnCdSe quantum well laser
    Akimoto, R.
    NOVEL IN-PLANE SEMICONDUCTOR LASERS XIV, 2015, 9382
  • [9] Radiative decay in type-II GaP/AlP/GaP quantum wells
    Nagao, S
    Fujii, K
    Fujimori, T
    Gotoh, H
    Ito, H
    Minami, F
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 1157 - 1161
  • [10] Reduced crosstalk semiconductor optical amplifiers based on type-II quantum wells
    Khurgin, JB
    Vurgraftman, I
    Meyer, JR
    Xu, SM
    Kang, JU
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (03) : 278 - 280
12