A charge transport study in diamond, surface passivated by high-k dielectric oxides

被引：8

作者：

Kovi, Kiran Kumar ^{[1
]}

Majdi, Saman ^{[1
]}

Gabrysch, Markus ^{[1
]}

Isberg, Jan ^{[1
]}

机构：

[1] Uppsala Univ, Dept Engn Sci, Div Elect, SE-75121 Uppsala, Sweden

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 20期

关键词：

SINGLE-CRYSTAL; THIN-FILMS; MOBILITY; CURRENTS;

D O I：

10.1063/1.4901961

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The recent progress in the growth of high-quality single-crystalline diamond films has sparked interest in the realization of efficient diamond power electronic devices. However, finding a suitable passivation is essential to improve the reliability and electrical performance of devices. In the current work, high-k dielectric materials such as aluminum oxide and hafnium oxide were deposited by atomic layer deposition on intrinsic diamond as a surface passivation layer. The hole transport properties in the diamond films were evaluated and compared to unpassivated films using the lateral time-of-flight technique. An enhancement of the near surface hole mobility in diamond films of up to 27% is observed when using aluminum oxide passivation. (C) 2014 AIP Publishing LLC.

引用

页数：5

共 24 条

[1] Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes [J].

Brezeanu, M. ;

Butler, T. ;

Rupesinghe, N. L. ;

Amaratunga, G. A. J. ;

Rashid, S. J. ;

Udrea, F. ;

Avram, M. ;

Brezeanu, G. .

[2] Formation of secondary electron cascades in single-crystalline plasma-deposited diamond upon exposure to femtosecond x-ray pulses [J].

Gabrysch, M. ;

Marklund, E. ;

Hajdu, J. ;

Twitchen, D. J. ;

Rudati, J. ;

Lindenberg, A. M. ;

Caleman, C. ;

Falcone, R. W. ;

Tschentscher, T. ;

Moffat, K. ;

Bucksbaum, P. H. ;

Als-Nielsen, J. ;

Nelson, A. J. ;

Siddons, D. P. ;

Emma, P. J. ;

Krejcik, P. ;

Schlarb, H. ;

Arthur, J. ;

Brennan, S. ;

Hastings, J. ;

Isberg, J. .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (06)

[3] Low temperature time of flight mobility measurements on synthetic single crystal diamond [J].

Gkoumas, S. ;

Lohstroh, A. ;

Sellin, P. J. .

[4] High carrier mobility in single-crystal plasma-deposited diamond [J].

Isberg, J ;

Hammersberg, J ;

Johansson, E ;

Wikström, T ;

Twitchen, DJ ;

Whitehead, AJ ;

Coe, SE ;

Scarsbrook, GA .

SCIENCE, 2002, 297 (5587) :1670-1672

[5] A lateral time-of-flight system for charge transport studies [J].

Isberg, J. ;

Majdi, S. ;

Gabrysch, M. ;

Friel, I. ;

Balmer, R. S. .

[6] On the transition between space-charge-free and space-charge-limited conduction in diamond [J].

Isberg, Jan ;

Gabrysch, Markus ;

Majdi, Saman ;

Kovi, Kiran Kumar ;

Twitchen, Daniel .

SOLID STATE SCIENCES, 2011, 13 (05) :1065-1067

[7] Atomic layer deposition of Al2O3 thin films on diamond [J].

Kawakami, N ;

Yokota, Y ;

Tachibana, T ;

Hayashi, K ;

Kobashi, K .

[8]

Kovi K. K., 2011, MRS P, V1282, P47

[9] Silicon Oxide Passivation of Single-Crystalline CVD Diamond Evaluated by the Time-of-Flight Technique [J].

Kovi, Kiran Kumar ;

Majdi, Saman ;

Gabrysch, Markus ;

Isberg, Jan .

ECS SOLID STATE LETTERS, 2014, 3 (05) :P65-P68

[10] Normally-off HfO2-gated diamond field effect transistors [J].

Liu, J. W. ;

Liao, M. Y. ;

Imura, M. ;

Koide, Y. .

APPLIED PHYSICS LETTERS, 2013, 103 (09)

← 1 2 3 →