Impact of the thin films structure on electrical and optical properties of thin films based on a mixture of Hf and Ti oxides

被引：0

作者：

Obstarczyk, Agata ^{[1
]}

Kaczmarek, Danuta ^{[1
]}

Mazur, Michal ^{[1
]}

Domaradzki, Jaroslaw ^{[1
]}

Wojcieszak, Damian ^{[1
]}

机构：

[1] Wroclaw Univ Technol, Wydzial Elekt Mikrosyst & Fotoniki, Ul Janiszewskiego 11-17, PL-50372 Wroclaw, Poland

来源：

PRZEGLAD ELEKTROTECHNICZNY | 2019年 / 95卷 / 09期

关键词：

thin film; magnetron sputtering; nanocrystalline structure; amorphous phase; DIELECTRICS; MODULATION;

D O I：

10.15199/48.2019.09.22

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The aim of this work was to prepare nanocrystalline and amorphous thin films based on a mixture of Hf and Ti oxides by magnetron sputtering. As a part of work, the detailed analysis of the impact of the thin films structure on their electrical properties such as leakage current density and dielectric constant and optical properties like extinction coefficient was carried out.

引用

页码：111 / 114

页数：4

共 9 条

[1] Structure and properties of amorphous thin film for optical data storage [J].

Gan, Fuxi .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (12-13) :1089-1099

[2]

Gao J, 2016, J ALLOY COMPD, V647, P322

[3] Microstructure, optical and electrical properties of sputtered HfFiO high-k gate dielectric thin films [J].

Jiang, S. S. ;

He, G. ;

Gao, J. ;

Xiao, D. Q. ;

Jin, P. ;

Li, W. D. ;

Lv, J. G. ;

Liu, M. ;

Liu, Y. M. ;

Sun, Z. Q. .

CERAMICS INTERNATIONAL, 2016, 42 (10) :11640-11649

[4] Deposition-power-modulated optical and electrical properties of sputtering-derived HfTiOx gate dielectrics [J].

Jin, P. ;

He, G. ;

Liu, M. ;

Xiao, D. Q. ;

Gao, J. ;

Chen, X. F. ;

Ma, R. ;

Zhang, J. W. ;

Zhang, M. ;

Sun, Z. Q. ;

Liu, Y. M. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 649 :128-134

[5] A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope [J].

Lanza, Mario .

MATERIALS, 2014, 7 (03) :2155-2182

[6]

Pokhriyal S, 2013, NANOPART MAT TODAY P, V3, P1311

[7] High-κ gate dielectrics:: Current status and materials properties considerations [J].

Wilk, GD ;

Wallace, RM ;

Anthony, JM .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (10) :5243-5275

[8] Modulation of charge trapping and current-conduction mechanism of TiO2-doped HfO2 gate dielectrics based MOS capacitors by annealing temperature [J].

Zhang, J. W. ;

He, G. ;

Chen, H. S. ;

Gao, J. ;

Chen, X. F. ;

Jin, P. ;

Xiao, D. Q. ;

Ma, R. ;

Liu, M. ;

Sun, Z. Q. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 647 :1054-1060

[9] Microstructure optimization and optical and interfacial properties modulation of sputtering-derived HfO2 thin films by TiO2 incorporation [J].

Zhang, J. W. ;

He, G. ;

Zhou, L. ;

Chen, H. S. ;

Chen, X. S. ;

Chen, X. F. ;

Deng, B. ;

Lv, J. G. ;

Sun, Z. Q. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 611 :253-259

← 1 →