Improved crystallization, domain, and ferroelectricity by controlling lead/ oxygen vacancies in Mn-doped PZT thin films

被引：21

作者：

Geng, Wenping ^{[1
]}

Chen, Xi ^{[2
]}

Pan, Long ^{[3
]}

Qiao, Xiaojun ^{[1
]}

He, Jian ^{[1
]}

Mu, Jiliang ^{[1
]}

Hou, Xiaojuan ^{[1
]}

Chou, Xiujian ^{[1
]}

机构：

[1] North Univ China, Sci & Technol Elect Test & Measurement Lab, Taiyuan 030051, Peoples R China

[2] Xidian Univ, Sch Aerosp Sci & Technol, Xian 710000, Peoples R China

[3] Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China

来源：

MATERIALS CHARACTERIZATION | 2021年 / 176卷

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

PZT; Sol-gel process; Ferroelectric properties; Mn-doped; PIEZOELECTRIC PROPERTIES; ZIRCONATE-TITANATE; STRAIN;

D O I：

10.1016/j.matchar.2021.111131

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pb(Zr0.3Ti0.7)O3-x mol% Mn (PZTM) (x = 0, 1, 2, and 3) thin films with high density and good crystallinity were obtained using a sol-gel method. Improved crystallization, domain, and ferroelectricity through controlling the lead/oxygen vacancies in Mn-doped lead zirconate titanate (PZT) thin films were investigated. Enhanced ferroelectricity and piezoelectricity were obtained in the 1 mol% Mn-doped PZT thin films. According to the Bragg equation, a small amount of Mn replaces the A-site (Pb2+) to achieve donor doping, which is conducive to the movement of domains and enhances the ferroelectric performance and piezoelectric coefficient. The pinning effect leads to reduced ferroelectric performance, which is caused by oxygen vacancies generated by Mn2+ replacing the B-site (Zr4+/Ti4+) during acceptor doping. The research results show that Mn doping is an effective method for improving the ferroelectric performance of PZT thin films.

引用

页数：7

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