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XPS and AES studies of UHTC ZrB2-SiC-Si3N4 treated with solar energy
被引:32
作者:
Beche, E.
[1
]
Balat-Pichelin, M.
[2
]
Flaud, V.
[3
]
Esvan, J.
[4
]
Duguet, T.
[4
]
Sciti, D.
[5
]
Alfano, D.
[6
]
机构:
[1] CNRS PROMES, SASI, F-66120 Font Romeu, France
[2] PROMES CNRS, MHTCS, F-66120 Font Romeu, France
[3] ICGM CNRS, F-34095 Montpellier 5, France
[4] CIRIMAT ENSIACET, F-31030 Toulouse 4, France
[5] ISTEC CNR, I-48018 Faenza, Italy
[6] CIRA, I-81043 Capua, Italy
关键词:
XPS;
AES;
ultra-high-temperature ceramics;
zirconium diboride;
silicon carbide;
RAY PHOTOELECTRON-SPECTROSCOPY;
AUGER-ELECTRON SPECTROSCOPY;
CERAMIC MATERIALS;
HIGH-TEMPERATURE;
ZIRCONIUM;
OXYGEN;
COMPOSITES;
FILMS;
D O I:
10.1002/sia.5389
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
The microstructure of ultra-high-temperature ceramics based on the ZrB2-SiC composition and a sintering additive (Si3N4) was investigated using XPS and AES techniques. These ZrB2-SiC-Si3N4 materials were treated in air plasma at high temperature (T > 1750 K) in the MESOX facility developed at the PROMES-CNRS laboratory (Moyen d'Essai Solaire d'OXydation for the measurement of atomic oxygen recombination coefficients). The surfaces were characterized before and after the air plasma treatment. Surface modifications were observed and induced by the oxidation process. The elementary composition was determined using AES and XPS. Core level spectroscopy (XPS) was used to determine the atomic composition and the nature of the chemical bonds from the Zr 3d(3/2,5/2), Si 2p(1/2,3/2), O 1s and C 1s photoelectron peaks. The microstructural analyses revealed the presence of oxide layers: Silica and zirconia compounds were detected at temperatures near 1800 K, and a zirconia compound was mainly detected above 2200 K. Copyright (C) 2014 John Wiley & Sons, Ltd.
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页码:817 / 822
页数:6
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