Theory of threading edge and screw dislocations in GaN

被引：320

作者：

Elsner, J

Jones, R

Sitch, PK

Porezag, VD

Elstner, M

Frauenheim, T

Heggie, MI

Oberg, S

Briddon, PR

机构：

[1] TECH UNIV,D-09107 CHEMNITZ,GERMANY

[2] UNIV SUSSEX,CPES,BRIGHTON BN1 9QJ,E SUSSEX,ENGLAND

[3] UNIV LULEA,DEPT MATH,S-97187 LULEA,SWEDEN

[4] UNIV NEWCASTLE UPON TYNE,DEPT PHYS,NEWCASTLE TYNE NE1 7RU,TYNE & WEAR,ENGLAND

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.79.3672

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The atomic structures, electrical properties, and line energies for threading screw and threading edge dislocations of wurtzite GaN are calculated within the local-density approximation. Both dislocations are electrically inactive with a band gap free from deep levels. These results are understood to arise from relaxed core structures which are similar to (<10(1)over bar 0>) surfaces. [S0031-9007(97)04460-8].

引用

页码：3672 / 3675

页数：4

共 23 条

[1] PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].