MODEL FOR THE FORMATION OF GaAs-Au AXIAL NANOWIRE HETEROSTRUCTURES UNDER FLASH LAMP ANNEALING

被引：0

作者：

Dubrovskii, Vladimir G. ^{[1
]}

机构：

[1] ITMO Univ, Kronverkskiy Pr 49, St Petersburg 197101, Russia

来源：

MATERIALS PHYSICS AND MECHANICS | 2019年 / 42卷 / 04期

基金：

俄罗斯科学基金会;

关键词：

GaAs-Au nanowire heterostructures; SiO2; template; flash lamp annealing; phase diagram; modeling; GROWTH; MECHANISM; EPITAXY; PHASE;

D O I：

10.18720/MPM.4242019_1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Semiconductor-metal nanowire heterostructures have attracted a particular interest over the last decade. However, they often suffer from low interface and crystalline quality. Here, we present a model for the formation of GaAs-Au axial nanowire heterostructures from GaAs/Au core-shell nanowires encapsulated into SiO2 under flash lamp annealing, as described in the previous work. The model reveals the basic mechanism and establishes the main control parameters of the process which enable high quality GaAs-Au heterostructures. It can also be used for the optimization of similar processes in a wide range of material combinations.

引用

页码：373 / 379

页数：7

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