Effects of phonons on mobility of dislocations and dislocation arrays

被引:53
作者
Chen, Xiang [1 ]
Xiong, Liming [2 ]
McDowell, David L. [3 ,4 ]
Chen, Youping [1 ]
机构
[1] Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USA
[2] Iowa State Univ, Dept Aerosp Engn, Ames, IA 50011 USA
[3] Georgia Inst Technol, Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
[4] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
关键词
Phonon; Dislocation mobility; Simulation; THERMAL-CONDUCTIVITY; EDGE DISLOCATIONS; SCATTERING; SIMULATION; WAVES;
D O I
10.1016/j.scriptamat.2017.04.033
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This work presents a coarse-grained atomistic study of the effect of phonons on the mobility of edge dislocations. A variety of phenomena, including phonon focusing and phonon-induced"dislocation drag, are reproduced in the simulations. Results show that interaction with phonons slows down the dislocations and phonon focusing results in the arrest of dislocations. A wavelet analysis, together with visualization, reveals that the phonon-dislocation interaction leads to a reduction of the energy associated with the dislocation core, with some energy lagging behind the decelerated dislocation or dispersed around the arrested dislocation through emission of secondary phonon waves, thus clarifying the underlying physics. (C) 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:22 / 26
页数:5
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