Examination of operation of PZT-Film-Si-substrate structures as pyroactive memory elements

The change of pyroelectric reaction sign observed in ferroelectric materials in consequence of polarization reversal has been consideredfbi-ferroelectric memory (FEM) elements with pyroelectric readout (FEMPyER). For PZT-film/Si-substrate structures, fabricated by RF sputtering, the mutually complementary pyroelectric and electrophysical characterization for examining FEM elements operation in FEMPyER mode was peiformed. Pyroelectric response (U-pi)-applied voltage (V) hysteresis U-pi-V-loops in the current U-pi 1 and voltage U-pi 2 modes, dielectric permittivity-V loops from U-pi 1/U-pi 2 ratio, charge Q-V-, current I-V- and capacity C-V- hysteresis loops are presented. The prospects of development of FEMPyER elements based on PZT-film/Si-substrate structures are considered.