POWER-ATTENUATED OPTIMIZATION FOR FOUR-WAVE MIXING-BASED WAVELENGTH CONVERSION IN SILICON NANOWIRE WAVEGUIDES

被引：12

作者：

Gao, S. M. ^{[1
]}

Li, Z. Q. ^{[1
]}

Zhang, X. Z. ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Modern Opt Instrumentat, Ctr Opt & Electromagnet Res, Hangzhou 310058, Zhejiang, Peoples R China

来源：

JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS | 2010年 / 24卷 / 8-9期

基金：

高等学校博士学科点专项科研基金; 中国国家自然科学基金;

关键词：

RAMAN AMPLIFICATION; PROPAGATION; GENERATION; GAIN; CHIP;

D O I：

10.1163/156939310791586142

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Four-wave mixing (FWM)-based wavelength conversion in silicon nanowire waveguides are numerically investigated by considering the power-attenuated phase-matched condition due to the linear loss and the nonlinear loss caused by two-photon absorption and free carrier absorption effects. The power-attenuated FWM is theoretically analyzed, and the influences of the linear and nonlinear losses on the wavelength conversion performance are evaluated. After analyzing the dependence of the conversion efficiency and bandwidth on the waveguide length and incident pump power, the global optimized solution is achieved by considering the conversion efficiency and bandwidth simultaneously. The optimization result is demonstrated to be tightly related to the linear and nonlinear losses in the silicon nanowire waveguides.

引用

页码：1255 / 1265

页数：11

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