Electric field effect on magnetization at the Fe/MgO(001) interface

被引：270

作者：

Niranjan, Manish K. ^{[1
,2
]}

Duan, Chun-Gang ^{[3
]}

Jaswal, Sitaram S. ^{[1
,2
]}

Tsymbal, Evgeny Y. ^{[1
,2
]}

机构：

[1] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA

[2] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA

[3] E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200062, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 22期

关键词：

annealing; antiferromagnetic materials; boron alloys; cobalt alloys; ferromagnetic materials; interface magnetism; iridium alloys; iron alloys; magnetic anisotropy; magnetic circular dichroism; manganese alloys; TUNNEL-JUNCTIONS; ANISOTROPY;

D O I：

10.1063/1.3443658

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Density-functional calculations are performed to explore magnetoelectric effects originating from the influence of an external electric field on magnetic properties of the Fe/MgO(001) interface. It is shown that the effect on the interface magnetization and magnetocrystalline anisotropy can be substantially enhanced if the electric field is applied across a dielectric material with a large dielectric constant. In particular, we predict an enhancement of the interface magnetoelectric susceptibility by a factor of the dielectric constant of MgO over that of the free standing Fe(001) surface. We also predict a significant effect of electric field on the interface magnetocrystalline anisotropy due to the change in the relative occupancy of the 3d-orbitals of Fe atoms at the Fe/MgO interface. These results may be interesting for technological applications such as electrically controlled magnetic data storage. (C) 2010 American Institute of Physics. [doi:10.1063/1.3443658]1

引用

页数：3

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