Role of gas residence time in the deposition rate and properties of rnicrocrystalline silicon films

被引：10

作者：

Guo Qun-Chao ^{[1
]}

Geng Xin-Hua ^{[1
]}

Sun Han ^{[1
]}

Wei Chang-Chun ^{[1
]}

Han Xiao-Yan ^{[1
]}

Zhang Xiao-Dan ^{[1
]}

Zhao Ying ^{[1
]}

机构：

[1] Nankai Univ, Inst Photoelect Thin Film Devices & Technique, Key Lab Photoelect Thin Film Devices & Tech Tianj, Minist Educ,Key Lab Optoelect Informat Sci & Tech, Tianjin 300071, Peoples R China

来源：

ACTA PHYSICA SINICA | 2007年 / 56卷 / 05期

关键词：

gas residence time; high deposition rate; microcrystalline silicon; very-high-frequency plasma-enhanced chemical vapor deposition;

D O I：

10.7498/aps.56.2790

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

To realize high deposition rate is an important problem in low-cost industrialization of microcrystalline silicon solar cells. Deposition of mu c-Si: H films at a high rate was investigated using very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) in this paper. The influence of gas residence time on deposition rate and the photoelectric and micro structural properties in the CVD process were studied by changing total gas flow. As a result, the efficiency of the microcrystalline silicon solar cell prepared at deposition rate 12 A/s reached 5.3%.

引用

收藏

页码：2790 / 2795

页数：6

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