Studying the Effect of the Annealing on Ag2Se Thin Film
被引:2
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作者:
Hasan, Shaymaa Qasim Abdul
论文数: 0引用数: 0
h-index: 0
机构:
Univ Baghdad, Coll Educ Pure Sci Ibn Al Haitham, Dept Phys, Baghdad, IraqUniv Baghdad, Coll Educ Pure Sci Ibn Al Haitham, Dept Phys, Baghdad, Iraq
Hasan, Shaymaa Qasim Abdul
[1
]
Obaid, Ahmed Z.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Baghdad, Coll Educ Pure Sci Ibn Al Haitham, Dept Phys, Baghdad, IraqUniv Baghdad, Coll Educ Pure Sci Ibn Al Haitham, Dept Phys, Baghdad, Iraq
Obaid, Ahmed Z.
[1
]
论文数: 引用数:
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机构:
Mustafa, Mohammed H.
[1
]
Hassun, Hanan K.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Baghdad, Coll Educ Pure Sci Ibn Al Haitham, Dept Phys, Baghdad, IraqUniv Baghdad, Coll Educ Pure Sci Ibn Al Haitham, Dept Phys, Baghdad, Iraq
Hassun, Hanan K.
[1
]
机构:
[1] Univ Baghdad, Coll Educ Pure Sci Ibn Al Haitham, Dept Phys, Baghdad, Iraq
来源:
TECHNOLOGIES AND MATERIALS FOR RENEWABLE ENERGY, ENVIRONMENT AND SUSTAINABILITY (TMREES20)
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2020年
/
2307卷
关键词:
Optical Studies;
Ag2Se;
atomic force microscopy techniques;
thermal evaporation;
NANOWIRES;
D O I:
10.1063/5.0032986
中图分类号:
X [环境科学、安全科学];
学科分类号:
08 ;
0830 ;
摘要:
This paper investigates the annealing effect on the silver selenide (Ag2Se) thin films. The Ag2Se thin films are established through the use of a thermal evaporation technique based on a glass substrate with thickness of 450nm.These thin films are annealed with different temperature values, i.e., (375, 450) k. In this study, the X-ray and atomic force microscopy (AFM) based-techniques are used to investigate the physical structure properties of the Ag2Se thin films. In addition, the absorbance and transmittance spectra are further investigated and recorded according to the range of wavelength from (400-1000) Nano mater (nm) with 3 different variations of temperature values. The results show that the greatest absorbance value in the sample is achieved at the temperature treatment of 450k while the largest transmittance value is obtained at temperature of 300k. Furthermore, the nature of electronic transitions is also evaluated in this paper. The results demonstrate that the thin films under consideration have a direct allowed transition with an optical energy gap of (1.9) and (1.7, 1.4) electron volt (eV) before and after annealing, respectively.
机构:
Sethu Inst Technol, Dept Phys, Kariapatti, IndiaMadurai Kamaraj Univ, Sch Phys, Film Lab, Madurai 625021, Tamil Nadu, India
Pandiararnanl, Mariappan
Soundararajan, Natarajan
论文数: 0引用数: 0
h-index: 0
机构:
Madurai Kamaraj Univ, Sch Phys, Film Lab, Madurai 625021, Tamil Nadu, IndiaMadurai Kamaraj Univ, Sch Phys, Film Lab, Madurai 625021, Tamil Nadu, India
机构:
Univ Southern Calif, Dept Chem, Los Angeles, CA 90089 USAUniv Southern Calif, Dept Chem, Los Angeles, CA 90089 USA
Tappan, Bryce A.
Zhu, Bonan
论文数: 0引用数: 0
h-index: 0
机构:
UCL, Dept Chem, London WC1H 0AJ, EnglandUniv Southern Calif, Dept Chem, Los Angeles, CA 90089 USA
Zhu, Bonan
Cottingham, Patrick
论文数: 0引用数: 0
h-index: 0
机构:
Univ Southern Calif, Dept Chem, Los Angeles, CA 90089 USAUniv Southern Calif, Dept Chem, Los Angeles, CA 90089 USA
Cottingham, Patrick
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机构:
Mecklenburg, Matthew
Scanlon, David O.
论文数: 0引用数: 0
h-index: 0
机构:
UCL, Dept Chem, London WC1H 0AJ, England
UCL, Thomas Young Ctr, London WC1E 6BT, England
Diamond Light Source Ltd, Didcot OX11 0DE, Oxon, EnglandUniv Southern Calif, Dept Chem, Los Angeles, CA 90089 USA
Scanlon, David O.
Brutchey, Richard L.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Southern Calif, Dept Chem, Los Angeles, CA 90089 USAUniv Southern Calif, Dept Chem, Los Angeles, CA 90089 USA
机构:
Sejong Univ, Graphene Res Inst, Seoul 05006, South Korea
Sejong Univ, Dept Nano & Adv Mat Engn, Seoul 05006, South KoreaSejong Univ, Graphene Res Inst, Seoul 05006, South Korea
Hussain, Sajjad
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机构:
Chae, Jinwoong
Akbar, Kamran
论文数: 0引用数: 0
h-index: 0
机构:
Sungkyunkwan Univ, Dept Energy Sci, Suwon 16419, South KoreaSejong Univ, Graphene Res Inst, Seoul 05006, South Korea
Akbar, Kamran
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机构:
Vikraman, Dhanasekaran
Linh Truong
论文数: 0引用数: 0
h-index: 0
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Sejong Univ, Dept Phys & Astron, Seoul 05006, South KoreaSejong Univ, Graphene Res Inst, Seoul 05006, South Korea
Linh Truong
Naqvi, Bilal Abbas
论文数: 0引用数: 0
h-index: 0
机构:
Sejong Univ, Graphene Res Inst, Seoul 05006, South Korea
Sejong Univ, Dept Nano & Adv Mat Engn, Seoul 05006, South KoreaSejong Univ, Graphene Res Inst, Seoul 05006, South Korea
Naqvi, Bilal Abbas
Abbas, Yawar
论文数: 0引用数: 0
h-index: 0
机构:
Khalifa Univ Sci & Technol, Dept Phys, POB 127788, Abu Dhabi 147999, U Arab EmiratesSejong Univ, Graphene Res Inst, Seoul 05006, South Korea
Abbas, Yawar
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机构:
Kim, Hyun-Seok
Chun, Seung-Hyun
论文数: 0引用数: 0
h-index: 0
机构:
Sejong Univ, Graphene Res Inst, Seoul 05006, South Korea
Sejong Univ, Dept Phys & Astron, Seoul 05006, South KoreaSejong Univ, Graphene Res Inst, Seoul 05006, South Korea
Chun, Seung-Hyun
Kim, Gunn
论文数: 0引用数: 0
h-index: 0
机构:
Sejong Univ, Graphene Res Inst, Seoul 05006, South Korea
Sejong Univ, Dept Phys & Astron, Seoul 05006, South KoreaSejong Univ, Graphene Res Inst, Seoul 05006, South Korea
Kim, Gunn
Jung, Jongwan
论文数: 0引用数: 0
h-index: 0
机构:
Sejong Univ, Graphene Res Inst, Seoul 05006, South Korea
Sejong Univ, Dept Nano & Adv Mat Engn, Seoul 05006, South KoreaSejong Univ, Graphene Res Inst, Seoul 05006, South Korea
机构:
Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R ChinaChinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China
Zhou, Jiangcong
Huang, Feng
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R ChinaChinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China
Huang, Feng
Xu, Ju
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R ChinaChinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China
Xu, Ju
Wang, Yuansheng
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R ChinaChinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China