Detecting variations of small-signal equivalent-circuit model parameters in the Si/SiGe HBT process with ANN

被引：5
|
作者：
Taher, H
Schreurs, D
Gillon, R
Vestiel, E
van Niekerk, C
Alabadelah, A
Nauwelaers, B
机构：
[1] Katholieke Univ Leuven, TELEMIC, Div ESAT, B-3001 Heverlee, Belgium
[2] AMI Semicond, Technol R&D Dept, B-9700 Oudenaarde, Belgium
[3] Univ Stellenbosch, Dept Elect & Elect Engn, ZA-7602 Stellenbosch, South Africa
来源：
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING | 2005年 / 15卷 / 01期
关键词：
de-embedding; small-signal modeling; artificial neural network; SiGeHBT;
D O I：
10.1002/mmce.20056
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
To capture variations in the Si/SiGe HBT process characteristics, we could extract a complete equivalent-circuit model for each device, but this would be a time-consuming process. In this article, we develop an alternative approach based on an artificial neural network (ANN). To keep the complexity of the ANN low, we limit this mapping to the most sensitive elements by utilizing sensitivity analysis on a reference device. The results show that the ANN predicts the model parameters very well. (C) 2004 Wiley Periodicals, Inc.
引用
收藏
页码：102 / 108
页数：7
相关论文
共 50 条
  • [41] Small-signal Equivalent Circuit Model of Series Resonant Converter
    Tian, Shuilin
    Lee, Fred C.
    Li, Qiang
    Li, Bin
    2015 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2015, : 172 - 179
  • [42] Small-signal equivalent circuit parameters extracted from an "atomistic" simulation
    Costa, AD
    Machado, PCM
    de Figueiredo, SA
    PROCEEDINGS OF THE INTERNATIONAL 2003 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE - IMOC 2003, VOLS I AND II, 2003, : 781 - 784
  • [43] RDF analysis of small-signal equivalent circuit parameters in MOSFET devices
    Oniciuc, L.
    Andrei, P.
    SISPAD 2007: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007, 2007, : 449 - 452
  • [44] Intrinsic stability of an HBT based on a small signal equivalent circuit model
    Chen Yanhu
    Shen Huajun
    Liu Xinyu
    Li Huijun
    Xu Hui
    Li Ling
    JOURNAL OF SEMICONDUCTORS, 2010, 31 (12)
  • [45] Intrinsic stability of an HBT based on a small signal equivalent circuit model
    陈延湖
    申华军
    刘新宇
    李惠军
    徐辉
    李玲
    半导体学报, 2010, 31 (12) : 66 - 69
  • [46] Systematic and rigorous extraction method of HBT small-signal model parameters
    Degachi, L
    Ghannouchi, FM
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2006, 54 (02) : 682 - 688
  • [47] A rigorous peeling algorithm for direct parameter extraction procedure of HBT small-signal equivalent circuit
    Zhang Jincan
    Liu Bo
    Zhang Leiming
    Sun Ligong
    Wang Jinchan
    Song Lu
    Analog Integrated Circuits and Signal Processing, 2015, 85 : 405 - 411
  • [48] A GAAS-MESFET SMALL-SIGNAL EQUIVALENT-CIRCUIT INCLUDING TRANSMISSION-LINE EFFECTS
    FJELDLY, TA
    PAULSEN, A
    JENSEN, O
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) : 1557 - 1563
  • [49] A NOTE ON EXPERIMENTAL-DETERMINATION OF SMALL-SIGNAL EQUIVALENT-CIRCUIT OF MILLIMETER-WAVE FETS
    ESKANDARIAN, A
    WEINREB, S
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1993, 41 (01) : 159 - 182
  • [50] DIRECT EXTRACTION OF THE ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR SMALL-SIGNAL EQUIVALENT-CIRCUIT
    COSTA, D
    LIU, WU
    HARRIS, JS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (09) : 2018 - 2024
12345