0.25μm radiation tolerant CMOS technology

被引:0
作者
Roedde, K [1 ]
机构
[1] Atmel Nantes SA, F-44306 Nantes 3, France
来源
PROCEEDINGS OF THE EUROPEAN SPACE COMPONENTS CONFERENCE - ESCCON 2002 | 2002年 / 507卷
关键词
D O I
暂无
中图分类号
V [航空、航天];
学科分类号
08 ; 0825 ;
摘要
The MOS devices of the standard 0.25mum CMOS technology have been characterized for their immunity against ionizing radiation. While the shift of the threshold voltage is acceptable for total doses in the range of several KGy, the leakage of irradiated NMOST needed to be improved through process modification. Additional processing steps to optimize the lateral isolation of the transistors yielded devices with total dose immunity up to 4KGy. No special layout rules for the transistors are required which eliminates the need for a radiation tolerant specific design library and makes the radiation tolerant technology mask compatible with the standard process.
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页码:31 / 33
页数:3
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