Electronic and transport properties of (6,2) carbon and silicon nanotubes: A first-principles calculation

被引：11

作者：

Jafari, Mir Ali ^{[1
]}

Kordbacheh, Amirhossein Ahmadkhan ^{[1
]}

Mahdian, Soheil ^{[2
]}

Ghasemi, Narges ^{[1
]}

机构：

[1] Iran Univ Sci & Technol, Dept Phys, Tehran 1684613114, Narmak, Iran

[2] Urmia Univ, Phys Dept, Nanoelect Res Grp, Orumiyeh 57147, Iran

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2020年 / 117卷 / 117期

关键词：

Density functional theory; Carbon nanotube; Silicon nanotube; Electronic properties; Transport properties; GRAPHENE; GRAPHITE; SCALE;

D O I：

10.1016/j.physe.2019.113855

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The aim of this study is to provide a detailed analysis on the electronic and transport properties of (6,2) carbon and silicon nanotubes attached to metallic gold nanosheets electrodes by density functional theory (DFT) and the Non-Equilibrium Green's Function (NEGF) methods. It is revealed that (6,2) carbon nanotube has an indirect band gap, 0.25 eV, whereas a (6,2) silicon nanotube shows metallic behavior. Additionally, the effects of the temperature on the quantum transport of the CNT and SiNT are also investigated. The current-voltage (I-V) characteristics indicate the higher value of the current in (6,2) SiNT in comparison with that of (6,2) CNT. Moreover, the current in low temperature is less than that of high temperature and a negative differential resistance (NDR) phenomenon is observed. The results imply a temperature independent transport properties in a single SiNT. As the number of carbon nanotubes, connected in series, increases, a significant increase in the current of the system is observed.

引用

页数：8

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