A novel CDM-like discharge effect during human body model (HBM) ESD stress

被引：0
|
作者：
Axelrad, V [1 ]
Huh, Y
Chen, JW
Bendix, P
机构：
[1] SEQUOIA Design Syst Inc, Woodside, CA 94062 USA
[2] Log Corp, LSI Labs, Santa Clara, CA USA
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2003年 / E86C卷 / 03期
关键词：
HBM; ESD protection; TCAD; mixed-mode circuit;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Interactions between ESD protection devices and other components of a chip can lead to complex and not easily anticipated discharge bevahior. Triggering of a protection MOSFET is equivalent to the closing of a fast switch and can cause substantial transient discharge currents. The peak value of this current depends on the chip capacitance, resistance, properties of the protection clamp, etc. Careful optimization of the protection circuit is therefore necessary to avoid current over-stress and circuit failure.
引用
收藏
页码：398 / 403
页数：6
相关论文
共 23 条
  • [1] A novel CDM-like discharge effect during Human Body Model (HBM) ESD stress
    Axelrad, V
    Huh, Y
    Chen, JW
    Bendix, P
    SISPAD 2002: INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2002, : 115 - 118
  • [2] Inductor-Based ESD Protection under CDM-like ESD Stress Conditions for RF Applications
    Thijs, S.
    Okushima, M.
    Borremans, J.
    Jansen, P.
    Linten, D.
    Scholz, M.
    Wambacq, P.
    Groeseneken, G.
    PROCEEDINGS OF THE IEEE 2008 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2008, : 49 - 52
  • [3] Investigation of ESD protection elements under high current stress in CDM-like time domain using backside laser interferometry
    Bychikhin, S
    Dubec, V
    Litzenberger, M
    Pogany, D
    Gornik, E
    Groos, G
    Esmark, K
    Stecher, M
    Stadler, W
    Gieser, H
    Wolf, H
    JOURNAL OF ELECTROSTATICS, 2003, 59 (3-4) : 241 - 255
  • [4] Correlation between Pulse I-V and Human Body Model (HBM) Tests for Drain Electrostatic Discharge (ESD) Robustness Evaluation of GaN Power HEMTs
    Sun, Jiahui
    Zheng, Zheyang
    Zhang, Li
    Chen, Kevin J.
    2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2022, : 73 - 76
  • [5] ANALYSIS OF HUMAN-BODY MODEL FOR ELECTROSTATIC DISCHARGE (ESD) WITH MULTIPLE CHARGED SOURCES
    GREASON, WD
    IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 1994, 30 (03) : 589 - 594
  • [6] Human body model ESD simulation including self heating effect
    T. Takani
    T. Toyabe
    Journal of Computational Electronics, 2006, 5 : 393 - 395
  • [7] Human body model ESD simulation including self heating effect
    Takani, T.
    Toyabe, T.
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2006, 5 (04) : 393 - 395
  • [8] Comparison and correlation of ESD HBM (human body model) obtained between TLPG, wafer-level, and package-level tests
    Lee, MT
    Liu, CH
    Lin, CC
    Chou, JT
    Tang, HTH
    Chang, YJ
    Fu, KY
    ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS, 2000, 2000, : 105 - 110
  • [9] ESD effect of deshunting sequences to recording heads using human body model
    Siritaratiwat, A
    Jutong, N
    Pinnoi, J
    Puprichitkul, C
    Suwannata, N
    IEEE ICIT' 02: 2002 IEEE INTERNATIONAL CONFERENCE ON INDUSTRIAL TECHNOLOGY, VOLS I AND II, PROCEEDINGS, 2002, : 39 - 41
  • [10] Problems of the human body model and electrostatic discharge part 2: the HBM test for non-wired pins of LSIs
    Suzuki, K
    Muranoi, T
    Sugita, R
    Takeuchi, M
    Hariu, T
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (09) : 972 - 975
123