Ion-irradiation-induced selective bond rearrangements in amorphous GeTe thin films

被引：37

作者：

De Bastiani, R. ^{[1
,2
]}

Carria, E. ^{[1
,2
]}

Gibilisco, S. ^{[1
,2
]}

Grimaldi, M. G. ^{[1
,2
]}

Pennisi, A. R. ^{[1
,2
]}

Gotti, A. ^{[3
]}

Pirovano, A. ^{[3
]}

Bez, R. ^{[3
]}

Rimini, E. ^{[1
,4
]}

机构：

[1] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy

[2] MATIS CNR INFM, I-95123 Catania, Italy

[3] R&D Technol Dev, Numonyx, I-20041 Milan, Italy

[4] CNR IMM, I-95123 Catania, Italy

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 24期

关键词：

amorphous semiconductors; bonds (chemical); crystallisation; germanium compounds; ion beam effects; IV-VI semiconductors; Raman spectra; reflectivity; semiconductor thin films; sputter deposition; time resolved spectra; PHASE-CHANGE; RAMAN-SCATTERING; GE2SB2TE5; FILMS; MECHANISM; CRYSTALLIZATION;

D O I：

10.1103/PhysRevB.80.245205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The change in the local order of amorphous sputter deposited GeTe thin films irradiated with Ge+ ion and its influence on the subsequent thermal induced crystallization has been investigated by means of micro-Raman spectroscopy and in situ time-resolved reflectivity. A reduction in the Ge-rich tetrahedral species and an enhancement of the crystallization kinetics occurred in the irradiated amorphous samples. The rearrangement of the amorphous network is suggested to be related to thermal spikes effects rather than to the defects produced by the ions in the collision cascade.

引用

页数：6

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