Conductivity Modulation in Vertical GaN PiN Diode: Evidence and Impact

被引：21
作者：
Han, Shaowen [1 ]
Yang, Shu [1 ,2 ]
Sheng, Kuang [1 ,2 ]
机构：
[1] Zhejiang Univ, Coll Elect Engn, Hangzhou 310027, Peoples R China
[2] Zhejiang Univ, Hangzhou Global Sci & Technol Innovat Ctr, Hangzhou 310027, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Conductivity modulation; dynamic R-ON; GaN-on-GaN; PiN diode; transient behavior; POWER DIODES; VOLTAGE;
D O I：
10.1109/LED.2021.3054731
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work presents the experimental evidence and impact of the conductivity modulation in the direct-bandgap GaN vertical PiN diode, by using pulse-mode and time-resolved characterizations as well as high-speed board-level switching tests. For the first time, the dependence of the forward transient behaviors in the vertical GaN PiN diode on time, current and temperature has been comprehensively investigated. The reduced ON-resistance (R-ON) with longer ON-state time, at higher current level or higher temperature verifies the conductivity modulation in the vertical GaN PiN diode in transient/dynamic level. Thanks to the limited trapping effects and conductivity modulation, the vertical GaN PiN diode can deliver superior dynamic R-ON performance after switching from high-voltage OFF state, showing great potential for high-power and high-efficiency power conversion.
引用
收藏
页码：300 / 303
页数：4
相关论文
共 34 条
[1]  
Armstrong H. L., 1957, IRE T ELECT DEVICES, V4, P111, DOI [10.1109/T-ED.1957.14211., DOI 10.1109/T-ED.1957.14211]
[2]   Thermal Stability of Silicon Carbide Power Diodes [J].
Buttay, Cyril ;
Raynaud, Christophe ;
Morel, Herve ;
Civrac, Gabriel ;
Locatelli, Marie-Laure ;
Morel, Florent .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (03) :761-769
[3]   SWITCH-ON TRANSIENTS IN P-N JUNCTIONS [J].
CHANG, YF .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (07) :2056-&
[4]   Vertical GaN-on-GaN PIN diodes fabricated on free-standing GaN wafer using an ammonothermal method [J].
Chen, Sung-Wen Huang ;
Wang, Hao-Yu ;
Hu, Cong ;
Chen, Yong ;
Wang, Hao ;
Wang, Jiale ;
He, Wei ;
Sun, Xiaojuan ;
Chiu, Hsien-Chin ;
Kuo, Hao-Chung ;
Wang, Weicong ;
Xu, Ke ;
Li, Dabing ;
Liu, Xinke .
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 804 :435-440
[5]   Measuring and interpreting the lifetime of silicon wafers [J].
Cuevas, A ;
Macdonald, D .
SOLAR ENERGY, 2004, 76 (1-3) :255-262
[6]   Vertical GaN Power Diodes With a Bilayer Edge Termination [J].
Dickerson, Jeramy R. ;
Allerman, Andrew A. ;
Bryant, Benjamin N. ;
Fischer, Arthur J. ;
King, Michael P. ;
Moseley, Michael W. ;
Armstrong, Andrew M. ;
Kaplar, Robert J. ;
Kizilyalli, Isik C. ;
Aktas, Ozgur ;
Wierer, Jonathan J., Jr. .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (01) :419-425
[7]   Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing (10(1)over-bar0) m-plane GaN [J].
Fu, Houqiang ;
Zhang, Xiaodong ;
Fu, Kai ;
Liu, Hanxiao ;
Alugubelli, Shanthan R. ;
Huang, Xuanqi ;
Chen, Hong ;
Baranowski, Izak ;
Yang, Tsung-Han ;
Xu, Ke ;
Ponce, Fernando A. ;
Zhang, Baoshun ;
Zhao, Yuji .
APPLIED PHYSICS EXPRESS, 2018, 11 (11)
[8]   High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination [J].
Fu, Houqiang ;
Fu, Kai ;
Huang, Xuanqi ;
Chen, Hong ;
Baranowski, Izak ;
Yang, Tsung-Han ;
Montes, Jossue ;
Zhao, Yuji .
IEEE ELECTRON DEVICE LETTERS, 2018, 39 (07) :1018-1021
[9]  
Han SW, 2020, PROC INT SYMP POWER, P294, DOI 10.1109/ISPSD46842.2020.9170096
[10]  
Han SW, 2019, PROC INT SYMP POWER, P63, DOI [10.1109/ispsd.2019.8757671, 10.1109/ISPSD.2019.8757671]
1234