Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications

被引：9

作者：

Nallet, F ^{[1
]}

Sénès, A ^{[1
]}

Planson, D ^{[1
]}

Locatelli, ML ^{[1
]}

Chante, JP ^{[1
]}

Renault, D ^{[1
]}

机构：

[1] Inst Natl Sci Appl, Ctr Genie Lyon, CEGELY, UMR 5005, F-69621 Villeurbanne, France

来源：

12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS | 2000年

关键词：

SiC; current limiting device; serial protection; temperature; simulation;

D O I：

10.1109/ISPSD.2000.856827

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents a novel field for solid state power devices : a 4H-SiC specific device is examined as a current limiting device for serial protection application. The device structure is a vertical power MOSFET Like with a existing N channel Its performances is simulated with ISE TCAD tools. A study of its electrothermal behavior is presented, demonstrating the SiC superiority over silicon with regards to this field.

引用

页码：287 / 290

页数：4

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