Interaction between oxygen and InAs(111) surfaces, influence of the electron accumulation layer

被引：4

作者：

Leandersson, KS ^{[1
]}

Göthelid, M ^{[1
]}

Tjernberg, O ^{[1
]}

Karlsson, UO ^{[1
]}

机构：

[1] KTH, IMIT, Lab Mat & Semicond Phys, S-16440 Kista, Sweden

来源：

APPLIED SURFACE SCIENCE | 2003年 / 212卷

关键词：

photoelectron spectroscopy; indium arsenide; oxidation; accumulation layer;

D O I：

10.1016/S0169-4332(03)00132-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The oxidation of InAs(1 1 1) surfaces has been studied by photoelectron spectroscopy. Both the InAs(1 1 1)A and the InAs(1 1 1)B surfaces are studied and it. is found that the initial oxidation follows different paths for the two surfaces. At low oxygen exposures of the A face the Fermi level structure, which is due to the electron accumulation layer, increases in intensity. On the B-side the intensity of the lone pair surface state decreases with increasing oxygen exposure. For larger exposures significant changes can be observed in the line shape of the In 4d and the As 3d core levels. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：589 / 594

页数：6

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