Analysis of critical thermal issues in 3D integrated circuits

被引：71

作者：

Tavakkoli, Fatemeh ^{[1
]}

Ebrahimi, Siavash ^{[2
]}

Wang, Shujuan ^{[1
]}

Vafai, Kambiz ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Mech Engn, Riverside, CA 92521 USA

[2] Univ Calif Irvine, Dept Mech & Aerosp Engn, Irvine, CA 92697 USA

来源：

INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER | 2016年 / 97卷

关键词：

3D integrated circuits; Thermal issues; Hot spots; Thermal management; HEAT-TRANSFER; FLUID-FLOW; MANAGEMENT; CHANNEL;

D O I：

10.1016/j.ijheatmasstransfer.2016.02.010

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Several key attributes of a 3D integrated chip structure are analyzed in this work. Critical features related to the effect of the size of the substrate, heat sink, device layer, through silicon vias (TSVs), thermal interface material (TIM), and the pitch and arrangement of core processors and TSVs as well as variation of thermal conductivity and total heat dissipation and distribution of power within the device layers core processors are investigated in depth. The effects of variation of pertinent features of the 3D integrated circuit (IC) structure on thermal hotspots are established and an optimization route for its reduction is clarified. In addition, a revealing analysis that shows the effect of the number of layers in the 3D structure is presented. Furthermore, the features that have insufficient effect on reduction of thermal hotspots are also established and discussed. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：337 / 352

页数：16

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