CdSe self-assembled quantum dots with ZnCdMgSe barriers emitting throughout the visible spectrum

被引：14

作者：

Perez-Paz, MN ^{[1
]}

Zhou, XC ^{[1
]}

Muñoz, M ^{[1
]}

Lu, H ^{[1
]}

Sohel, M ^{[1
]}

Tamargo, MC ^{[1
]}

Jean-Mary, F ^{[1
]}

Akins, DL ^{[1
]}

机构：

[1] CUNY City Coll, Dept Chem, CASI, New York, NY 10031 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 26期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1834993

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-assembled quantum dots of CdSe with ZnCdMgSe barriers have been grown by molecular beam epitaxy on InP substrates. The optical and microstructural properties were investigated using photoluminescence (PL) and atomic force microscopy (AFM) measurements. Control and reproducibility of the quantum dot (QD) size leading to light emission throughout the entire visible spectrum range has been obtained by varying the CdSe deposition time. Longer CdSe deposition times result in a redshift of the PL peaks as a consequence of an increase of QD size. AFM studies demonstrate the presence of QDs in uncapped structures. A comparison of this QD system with CdSe/ZnSe shows that not only the strain but also the chemical properties of the system play an important role in QD formation. (C) 2004 American Institute of Physics.

引用

页码：6395 / 6397

页数：3