Dynamics of carbon diffusion and segregation through nickel catalyst, investigated by in-situ XPS, during the growth of nitrogen-doped graphene

被引：36
作者：
Bleu, Y. [1 ]
Barnier, V [2 ]
Christien, F. [2 ]
Bourquard, F. [1 ]
Loir, A-S [1 ]
Garrelie, F. [1 ]
Donnet, C. [1 ]
机构：
[1] Univ Jean Monnet St Etienne, Univ Lyon, Lab Hubert Curien, Inst Opt,Grad Sch,CNRS,UMR 5516, F-42023 St Etienne, France
[2] Univ Lyon, Mines St Etienne, CNRS, UMR 5307,LGF,Ctr SMS, F-42023 St Etienne, France
来源：
CARBON | 2019年 / 155卷
关键词：
Nitrogen-doped graphene; Pulsed laser deposition; Diffusion; Segregation; In situ XPS; ELECTRICAL-PROPERTIES; SURFACE SEGREGATION; FILMS; FEMTOSECOND; BORON; DEPOSITION; GRAPHITE; KINETICS;
D O I：
10.1016/j.carbon.2019.08.084
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The mechanisms of diffusion and segregation of carbon from a solid carbon-based film, through a nickel film catalyst, was investigated using in situ, time- and depth-resolved X-ray photoelectron spectroscopy. The graphene precursor was a carbon nitride amorphous film obtained by pulse laser deposition. Changes in both surface and bulk sensitive carbon components versus annealing time was investigated at temperatures between 200 degrees C and 500 degrees C. A model of carbon diffusion/segregation through the nickel film was implemented, enabling the quantitative description of the graphene growth. Carbon diffusion through the nickel film was shown to occur at low temperatures (200-300 degrees C) and to induce the growth of graphene domains. The fine microstructure and high density of defects in the nickel catalyst film accelerated the transport of carbon, faster than conventional bulk diffusion. At 500 degrees C, bulk diffusion of carbon occurred, due to the recovering of the nickel grain microstructure. The diffusion/segregation model developed in this study can be used as a support to a better control of the growth and quality of the graphene. Our interpretations are discussed in relation to similar approaches related to graphene growth by chemical vapor deposition. (C) 2019 Elsevier Ltd. All rights reserved.
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页码：410 / 420
页数：11
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