Passive/active oxidation transition for CMC structural materials designed for the IXV vehicle re-entry phase

被引：42

作者：

Balat-Pichelin, M. ^{[1
]}

Charpentier, L. ^{[1
]}

Panerai, F. ^{[2
]}

Chazot, O. ^{[2
]}

Helber, B. ^{[2
,3
]}

Nickel, K. ^{[4
]}

机构：

[1] PROMES CNRS Lab, F-66120 Font Romeu, France

[2] von Karman Inst Fluid Dynam, B-1640 Rhode St Genese, Belgium

[3] Vrije Univ Brussel, Res Grp Electrochem & Surface Engn, B-1050 Brussels, Belgium

[4] Univ Tubingen, Dept Geosci Appl Mineral, D-72074 Tubingen, Germany

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2015年 / 35卷 / 02期

关键词：

Oxidation transition; High temperature; Air plasma; Mass loss rates; SEM; HIGH-TEMPERATURE OXIDATION; SINTERED SILICON-CARBIDE; ACTIVE OXIDATION; LOW-PRESSURE; MATRIX COMPOSITES; HIGH-ENTHALPY; PLASMA; CO2;

D O I：

10.1016/j.jeurceramsoc.2014.09.026

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper reports the experimental results of oxidation studies for the determination of the transition between passive and active oxidation of two silicon carbide-based materials produced by Heraldes-Safran (France) and MT Aerospace (Germany) with also the study of the oxidation kinetics in the active zone for the highest heating conditions of the Intermediate eXperimental Vehicle (IXV) re-entry trajectory. The transition between active and passive oxidation is determined for both materials using two different plasma facilities a low enthalpy one using the MESOX at PROMES-CNRS (Font-Romeu Odeillo, France) and a high enthalpy one using the Plasmatron at VKI (Rhode St Genese, Belgium) and the experimental results lead to the same transition law. Characterization by SEM of the oxidized samples (surface and cross-section) is shown. Mass loss rates in active oxidation conditions are reported for both Heraldes and MTA materials. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：487 / 502

页数：16

共 30 条

[1]

[Anonymous], 1976, Ceram. Int., DOI DOI 10.1016/0390-5519(76)90022-3

[2] ACTIVE TO PASSIVE TRANSITION IN THE OXIDATION OF SILICON-CARBIDE AT HIGH-TEMPERATURE AND LOW-PRESSURE IN MOLECULAR AND ATOMIC OXYGEN [J].