Structural and Fluorescence Studies of Polycrystalline -Al2O3 Obtained From Sulfuric Acid Anodic Alumina

被引:14
作者
Chernyakova, Katsiaryna [1 ]
Karpicz, Renata [2 ]
Rutkauskas, Danielis [2 ]
Vrublevsky, Igor [1 ]
Hassel, Achim Walter [3 ]
机构
[1] Belarusian State Univ Informat & Radioelect, P Brovka 6, Minsk, BELARUS
[2] Ctr Phys Sci & Technol, Sauletekio Ave 3, Vilnius, Lithuania
[3] Johannes Kepler Univ Linz, Inst Chem Technol Inorgan Mat, Altenbergerstr 69, Linz, Austria
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2018年 / 215卷 / 16期
关键词
anodic alumina; fluorescence; polycrystalline alumina; sulfuric acid; thermal analysis; OPTICAL-PROPERTIES; NANOSTRUCTURED ALUMINA; OXIDE FILMS; LUMINESCENCE; PHOTOLUMINESCENCE; FABRICATION; MEMBRANES; NANOCRYSTALLINE; GAMMA-AL2O3; TEMPERATURE;
D O I
10.1002/pssa.201700892
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the present study, robust -Al2O3 specimens (144 mu m thick) are obtained by the heat treatment at 1400 degrees C of free-standing sulfuric acid anodic alumina. Scanning electron microscopy analysis show that the as-anodized anodic alumina films possess well-ordered porous structure with the pore diameter of about 10.2nm. After heat treatment at 1400 degrees C the samples lose their porous structure and certain crystallites with average size of 5-6 mu m can be observed. These crystallites can be visualized by fluorescence imaging. According to differential scanning calorimetry data accomplished by X-ray analysis, the first step of crystallization occurs at around 967 degrees C, producing -Al2O3. The second one takes place at around 1194 degrees C, which corresponds to the formation of -Al2O3. For the as-anodized and samples treated at temperatures below 1200 degrees C the band at 420nm can be attributed to the emission of OH-related and other impurities centers. The fluorescence at 460nm relates to emission of oxygen defect centers, such as F and F-2 centers, and sharp bands at 678 and 693nm indicate the formation of highly crystalline alumina. For -Al2O3, its fluorescence is caused by both surface defects and oxygen defect centers. The fluorescence spectroscopy can be applied as a cheap, fast, nondestructive method for the identification of amorphous alumina crystallization.
引用
收藏
页数:6
相关论文
共 39 条
[11]   Visible luminescence of Al2O3 nanoparticles embedded in silica glass host matrix [J].
El Mir, L. ;
Amlouk, A. ;
Barthou, C. .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2006, 67 (11) :2395-2399
[12]   A REVIEW OF THE OPTICAL-PROPERTIES OF ANION LATTICE VACANCIES, AND ELECTRICAL-CONDUCTION IN ALPHA-AL2O3 - THEIR RELATION TO RADIATION-INDUCED ELECTRICAL DEGRADATION [J].
EVANS, BD .
JOURNAL OF NUCLEAR MATERIALS, 1995, 219 :202-223
[13]   FABRICATION OF TRANSPARENT GAMMA-AL2O3 FROM NANOSIZE PARTICLES [J].
GALLAS, MR ;
HOCKEY, B ;
PECHENIK, A ;
PIERMARINI, GJ .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (08) :2107-2112
[14]   On the origin of light emission from porous anodic alumina formed in sulfuric acid [J].
Huang, GS ;
Wu, XL ;
Siu, GG ;
Chu, PK .
SOLID STATE COMMUNICATIONS, 2006, 137 (11) :621-624
[15]   Reversible Photoinduced Interconversion of Color Centers in α-Al2O3 Prepared under Vacuum [J].
Itou, M. ;
Fujiwara, A. ;
Uchino, T. .
JOURNAL OF PHYSICAL CHEMISTRY C, 2009, 113 (49) :20949-20957
[16]   Porous Aluminum Oxide Formed by Anodizing in Various Electrolyte Species [J].
Kikuchi, Tatsuya ;
Nakajima, Daiki ;
Nishinaga, Osamu ;
Natsui, Shungo ;
Suzuki, Ryosuke O. .
CURRENT NANOSCIENCE, 2015, 11 (05) :560-571
[17]   Luminescence properties of nanostructured alumina ceramic [J].
Kortov, V. S. ;
Ermakov, A. E. ;
Zatsepin, A. F. ;
Nikiforov, S. V. .
RADIATION MEASUREMENTS, 2008, 43 (2-6) :341-344
[18]   Raman spectroscopic and photoluminescence investigations on laser surface modified α-Al2O3 coatings [J].
Krishnan, R ;
Kesavamoorthy, R ;
Dash, S ;
Tyagi, AK ;
Raj, B .
SCRIPTA MATERIALIA, 2003, 48 (08) :1099-1104
[19]   Nanostructured alumina as a cathode of organic light-emitting devices [J].
Kukhta, AV ;
Gorokh, GG ;
Kolesnik, EE ;
Mitkovets, AI ;
Taoubi, MI ;
Koshin, YA ;
Mozalev, AM .
SURFACE SCIENCE, 2002, 507 :593-597
[20]   Photoluminescence of erbium-doped aluminum oxide films with embedded silicon nanoparticles [J].
Lazarouk, SK ;
Mudryi, AV ;
Ivanyukovich, AV ;
Leshok, AA ;
Unuchek, DN ;
Labunov, VA .
SEMICONDUCTORS, 2005, 39 (08) :891-893