Analysis of electron beam damage of exfoliated MoS2 sheets and quantitative HAADF-STEM imaging

被引：65

作者：

Garcia, Alejandra ^{[1
]}

Raya, Andres M. ^{[2
]}

Mariscal, Marcelo M. ^{[3
]}

Esparza, Rodrigo ^{[1
]}

Herrera, Miriam ^{[2
]}

Molina, Sergio I. ^{[2
]}

Scavello, Giovanni ^{[4
]}

Galindo, Pedro L. ^{[4
]}

Jose-Yacaman, Miguel ^{[1
]}

Ponce, Arturo ^{[1
]}

机构：

[1] Univ Texas San Antonio, Dept Phys & Astron, San Antonio, TX 78249 USA

[2] Univ Cadiz, Dept Ciencia Mat Ingn Met & Quim Inorgan, Cadiz 11510, Spain

[3] Univ Nacl Cordoba, Fac Ciencias Quim, Dept Matemat & Fis, INFIQC CONICET, RA-5000 Cordoba, Argentina

[4] Univ Cadiz, CASEM, Dept Ingn Informat, Cadiz 11510, Spain

来源：

ULTRAMICROSCOPY | 2014年 / 146卷

基金：

美国国家科学基金会; 美国国家卫生研究院;

关键词：

Low-voltage transmission electron microscopy; Aberration-corrected microscopy; Molybdenum disulfide; Radiation damage; MOLYBDENUM-DISULFIDE; RADIATION-DAMAGE; TRANSITION; INTERCALATION;

D O I：

10.1016/j.ultramic.2014.05.004

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

In this work we examined MoS2 sheets by aberration-corrected scanning transmission electron microscopy (STEM) at three different energies: 80, 120 and 200 kV. Structural damage of the MoS2 sheets has been controlled at 80 kV according a theoretical calculation based on the inelastic scattering of the electrons involved in the interaction electron-matter. The threshold energy for the MoS2 material has been found and experimentally verified in the microscope. At energies higher than the energy threshold we show surface and edge defects produced by the electron beam irradiation. Quantitative analysis at atomic level in the images obtained at 80 kV has been performed using the experimental images and via STEM simulations using SICSTEM software to determine the exact number of MoS2 layers. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：33 / 38

页数：6

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