Design of a high efficiency CdS/CdTe solar cell with optimized step doping, film thickness, and carrier lifetime of the absorption layer

被引：14
作者：
Khosroabadi, S. [1 ]
Keshmiri, S. H. [2 ]
Marjani, S. [2 ]
机构：
[1] Imam Reza Int Univ, Dept Elect Engn, Mashhad, Iran
[2] Ferdowsi Univ Mashhad, Dept Elect Engn, Mashhad, Iran
来源：
JOURNAL OF THE EUROPEAN OPTICAL SOCIETY-RAPID PUBLICATIONS | 2014年 / 9卷
关键词：
Thin film solar cell; CdS/CdTe; Optimization; Carrier lifetime;
D O I：
10.2971/jeos.2014.14052
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A high-efficiency CdS/CdTe solar cell with step doped absorber layer, optimized back surface field layer, and long carrier lifetime in the absorption layer was designed. At first, The CdS/CdTe reference cell is simulated and compared with previous experimental data. In order to obtain the highest efficiency, the thickness and step doping of the absorber and back surface field layer were optimized. In addition, the effect of carrier lifetime variation in the CdTe layer on the conversion efficiency of CdTe cell was investigated. Compared with reference cell, Efficiency enhancement of the proposed structure was 4.44%. Under global AM 1.5 conditions, the optimized cell structure had an open-circuit voltage of 0.987 V, a short-circuit current density of 27.9 mA/cm(2) and a fill factor of 82.4%, corresponding to a total area conversion efficiency of 22.76%.
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页数：6
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