Improvements of MOVPE grown (11(2)over-bar2) oriented GaN on pre-structured sapphire substrates using a SiNx interlayer and HVPE overgrowth

被引：22

作者：

Caliebe, Marian ^{[1
]}

Meisch, Tobias ^{[1
]}

Neuschl, Benjamin ^{[2
]}

Bauer, Sebastian ^{[2
]}

Helbing, Jeffrey ^{[2
]}

Beck, Dominik ^{[2
]}

Thonke, Klaus ^{[2
]}

Klein, Martin ^{[1
]}

Heinz, Dominik ^{[1
]}

Scholz, Ferdinand ^{[1
]}

机构：

[1] Univ Ulm, Inst Optoelect, Albert Einstein Allee 45, D-89081 Ulm, Germany

[2] Univ Ulm, Inst Quantum Matter, Semicond Phys Grp, D-89081 Ulm, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4 | 2014年 / 11卷 / 3-4期

关键词：

semipolar (11-22) GaN; SiN-interlayer; pre-structured sapphire substrates; oxygen doping on semipolar planes; NITRIDE; EPITAXY; QUALITY; LAYERS; DISLOCATIONS; POLARIZATION; OPTIMIZATION; REDUCTION;

D O I：

10.1002/pssc.201300527

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this article two methods for imprtance of (11 (2) over bar2) oriented semipolar GaN grown by MOVPE on presturcuted sapphire substraes are invstiped. The integrateion of SiNx. Interlayer helps to obain bet crystals quaity also the overgrowth of the MOVPE samples by HVPE as a way to obtain smoother GaN surface. A High incorporation of oxygen on (11 (2) over bar2) oriened GaN compared to (0001) oriented GaN grown by HVPE was observed.

引用

页码：525 / 529

页数：5

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