Optical net gain measurement in n-type doped germanium waveguides under optical pumping for silicon monolithic laser

被引：8

作者：

Okumura, Tadashi ^{[1
]}

Oda, Katsuya ^{[1
]}

Kasai, Junichi ^{[1
]}

Sagawa, Misuzu ^{[2
]}

Suwa, Yuji ^{[1
]}

机构：

[1] Hitachi Ltd, Ctr Exploratory Res, 1-280 Higashi Koigakubo, Kokubunji, Tokyo 1858601, Japan

[2] Hitachi Ltd, Ctr Technol Innovat Elect, 1-280 Higashi Koigakubo, Kokubunji, Tokyo 1858601, Japan

来源：

OPTICS EXPRESS | 2016年 / 24卷 / 09期

关键词：

GE; ABSORPTION; SI;

D O I：

10.1364/OE.24.009132

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Silicon (Si) monolithic lasers are key devices in large-scale, high-density photonic integrated circuits. Germanium (Ge) is promising as an active layer due to the complementary metal-oxide semiconductor process compatibility with Si. A net optical gain from Ge is essential to demonstrate lasing operation. We fabricated Ge waveguides and investigated the n-type doping effect on the net optical gain. The estimated net gain of the n-Ge waveguide increased from -2200 to -500/cm, namely reducing loss, under optically pumped condition. (C) 2016 Optical Society of America

引用

页码：9132 / 9139

页数：8