Stabilizing dielectric constants of fluorine-doped SiO2 films by N2O-plasma annealing

被引：32

作者：

Takeishi, S ^{[1
]}

Kudoh, H ^{[1
]}

Shinohara, R ^{[1
]}

Tsukune, A ^{[1
]}

Satoh, Y ^{[1
]}

Harada, H ^{[1
]}

Yamada, M ^{[1
]}

机构：

[1] FUJITSU LTD,PROC INTEGRAT DEPT,PROC DEV DIV,NAKAHARA KU,KAWASAKI,KANAGAWA 211,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1996年 / 143卷 / 01期

关键词：

D O I：

10.1149/1.1836441

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Fluorine-doped SiO2(FSG) has a low dielectric constant just after deposition. However, the dielectric constant of FSG gradually increases with time when left in air. We have developed a way to stabilize dielectric constants of FSG left in the air by plasma annealing. We have found that N2O-plasma annealing is quite effective for blocking moisture. The dielectric constants of FSG treated by the N2O-plasma annealing rarely change.

引用

页码：381 / 385

页数：5

共 12 条

[1]

ADAMS AC, 1991, J ELECTROCHEM SOC, V128, P423

[2] USING A DESIGN OF EXPERIMENTS APPROACH FOR CHARACTERIZATION OF UNDOPED PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITED SIO2 FILM PROPERTIES [J].

ALLMAN, DDJ ;

FUCHS, KP ;

CUCHIARO, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03) :485-491

[3]

DASILVA EF, 1987, IEEE T NUCL SCI, V9, P38

[4] NOVEL N2O-OXYNITRIDATION TECHNOLOGY FOR FORMING HIGHLY RELIABLE EEPROM TUNNEL OXIDE-FILMS [J].

FUKUDA, H ;

YASUDA, M ;

IWABUCHI, T ;

OHNO, S .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (11) :587-589

[5] THERMAL-DESORPTION STUDIES OF PHOSPHORUS-DOPED SPIN-ON-GLASS FILMS [J].

HIRASHITA, N ;

KOBAYAKAWA, M ;

ARIMATSU, A ;

YOKOYAMA, F ;

AJIOKA, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (03) :794-799

[6] THE EFFECT OF FLUORINE ADDITIONS TO THE OXIDATION OF SILICON [J].

KIM, US ;

WOLOWODIUK, CH ;

JACCODINE, RJ ;

STEVIE, F ;

KAHORA, P .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (07) :2291-2296

[7]

KOUDO S, 1979, CHEM SOC JPN, V52, P2046

[8]

KOUVATOS D, 1991, J ELECTROCHEM SOC, V138, P1751

[9] IR SPECTROSCOPIC INVESTIGATION OF SIO2 FILM STRUCTURE [J].

LISOVSKII, IP ;

LITOVCHENKO, VG ;

LOZINSKII, VG ;

STEBLOVSKII, GI .

THIN SOLID FILMS, 1992, 213 (02) :164-169

[10] ELECTRONIC-STRUCTURE AND VIBRATIONAL-STRUCTURE CALCULATIONS IN MODELS OF THE COMPRESSED SIO2 GLASS SYSTEM [J].

MURRAY, RA ;

CHING, WY .

PHYSICAL REVIEW B, 1989, 39 (02) :1320-1331

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