In situ monitoring of the deposition of a-Si:H/c-Si heterojunctions by transient photoconductivity measurements

被引：2

作者：

von Aichberger, S ^{[1
]}

Feist, H ^{[1
]}

Löffler, J ^{[1
]}

Kunst, M ^{[1
]}

机构：

[1] Hahn Meitner Inst, Dept SES, D-14109 Berlin, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 65卷 / 1-4期

关键词：

heterojunction; A-Si : H/c-Si; passivation; photoconductivity;

D O I：

10.1016/S0927-0248(00)00121-5

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

To investigate the relation between interface passivation and the performance of an a-Si:H/c-Si solar cell, we monitored the glow discharge deposition process of n-doped a-Si:H films on p-doped crystalline silicon in situ by transient photoconductivity measurements in the microwave frequency range (TRMC measurements). After the end of the deposition process, we also performed ex situ TRMC measurements of the heterojunctions. From three representative samples, we prepared solar cells and their performances were compared to the TRMC measurements. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：417 / 422

页数：6

共 3 条

[1] A NEW TYPE OF HIGH-EFFICIENCY WITH A LOW-COST SOLAR-CELL HAVING THE STRUCTURE OF A MU-C-SIC POLYCRYSTALLINE SILICON HETEROJUNCTION [J].

MATSUMOTO, Y ;

HIRATA, G ;

TAKAKURA, H ;

OKAMOTO, H ;

HAMAKAWA, Y .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (10) :6538-6544

[2] IN-SITU MEASUREMENTS OF THE RECOMBINATION AT THE CRYSTALLINE SILICON AMORPHOUS-SILICON HETEROINTERFACE BY TIME-RESOLVED MICROWAVE CONDUCTIVITY MEASUREMENTS DURING LOW-TEMPERATURE ANNEALING AND SILANE PLASMA EXPOSURE [J].

NEITZERT, HC ;

KUNST, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (06) :2753-2757

[3] CHARGE-CARRIER KINETICS IN SEMICONDUCTORS BY MICROWAVE CONDUCTIVITY MEASUREMENTS [J].

SWIATKOWSKI, C ;

SANDERS, A ;

BUHRE, KD ;

KUNST, M .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) :1763-1775

← 1 →