Repression of Interlayer Recombination by Graphene Generates a Sensitive Nanostructured 2D vdW Heterostructure Based Photodetector

被引：59

作者：

Wang, Huide ^{[1
]}

Gao, Shan ^{[1
]}

Zhang, Feng ^{[1
]}

Meng, Fanxu ^{[1
]}

Guo, Zhinan ^{[1
]}

Cao, Rui ^{[1
]}

Zeng, Yonghong ^{[1
]}

Zhao, Jinlai ^{[1
]}

Chen, Si ^{[1
]}

Hu, Haiguo ^{[1
]}

Zeng, Yu-Jia ^{[1
]}

Kim, Sung Jin ^{[2
]}

Fan, Dianyuan ^{[1
]}

Zhang, Han ^{[1
]}

Prasad, Paras N. ^{[3
,4
]}

机构：

[1] Shenzhen Univ, Guangdong Lab Artificial Intelligence & Digital E, Coll Phys & Optoelect Engn, Inst Microscale Optoelect,Int Collaborat Lab 2D M, Shenzhen 518060, Peoples R China

[2] Univ Miami, Dept Elect & Comp Engn, Coral Gables, FL 33146 USA

[3] SUNY Buffalo, Inst Lasers Photon & Biophoton, Buffalo, NY 14260 USA

[4] SUNY Buffalo, Dept Chem, Buffalo, NY 14260 USA

来源：

ADVANCED SCIENCE | 2021年 / 8卷 / 15期

基金：

中国国家自然科学基金;

关键词：

black phosphorus; graphene; interlayer recombination; sensitive photodetectors; vdW heterostructures; BROAD-BAND PHOTODETECTOR; P-N-JUNCTIONS; INTERNAL PHOTOEMISSION; HIGH-PERFORMANCE; HETEROJUNCTION; DETECTORS; ULTRAFAST;

D O I：

10.1002/advs.202100503

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Great success in 2D van der Waals (vdW) heterostructures based photodetectors is obtained owing to the unique electronic and optoelectronic properties of 2D materials. Performance of photodetectors based 2D vdW heterojunctions at atomic scale is more sensitive to the nanointerface of the heterojunction than conventional bulk heterojunction. Here, a nanoengineered heterostructure for the first-time demonstration of a nanointerface using an inserted graphene layer between black phosphorus (BP) and InSe which inhibits interlayer recombination and greatly improves photodetection performances is presented. In addition, a transition of the transport characteristics of the device is induced by graphene, from diffusion motion of minority carriers to drift motion of majority carriers. These two reasons together with an internal photoemission effect make the BP/G/InSe-based photodetector have ultrahigh specific detectivity at room temperature. The results demonstrate that high-performance vdW heterostructure photodetectors can be achieved through simple structural manipulation of the heterojunction interface on nanoscale.

引用

页数：7

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