Substrate temperature measurement using a commercial band-edge detection system

被引：13

作者：

Farrer, I.

Harris, J. J.

Thomson, R.

Barlett, D.

Taylor, C. A.

Ritchie, D. A.

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] RTA Instruments Ltd, Monks Eleigh IP7 7BA, Suffolk, England

[3] k Space Associates Inc, Ann Arbor, MI 48103 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷

关键词：

substrate; molecular beam epitaxy;

D O I：

10.1016/j.jcrysgro.2006.11.273

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the use of a commercially available band-edge detection system for substrate temperature monitoring of gallium arsenide substrates. The extension of the technique to the cases where strong absorption by either the substrate or substrate holder might normally preclude the use of such systems due to poor signal levels is discussed. For indium-mounted wafers, a background subtraction/removal is applied which allows unambiguous determination of the band edge across the full temperature range. An alternative method of operation of the instrument as a highly configurable pyrometer allows measurements to be made on highly conducting p-type substrates where free carrier absorption swamps the band edge. (c) 2007 Elsevier B.V. All rights reserved.

引用

收藏

页码：88 / 92

页数：5

相关论文

共 13 条

[1] High resistivity annealed low-temperature GaAs with 100 fs lifetimes [J].

Gregory, IS ;

Baker, C ;

Tribe, WR ;

Evans, MJ ;

Beere, HE ;

Linfield, EH ;

Davies, AG ;

Missous, M .

APPLIED PHYSICS LETTERS, 2003, 83 (20) :4199-4201

[2] Diffuse reflectance spectroscopy for in situ process monitoring and control during molecular beam epitaxy growth of InGaAs/AlGaAs pseudomorphic high electron mobility transistors [J].

Guyer, JE ;

Tseng, WF ;

Pellegrino, JG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (05) :2518-2522

[3] INFRARED TRANSMISSION SPECTROSCOPY OF GAAS DURING MOLECULAR-BEAM EPITAXY [J].

HELLMAN, ES ;

HARRIS, JS .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :38-42

[4] In situ temperature control of molecular beam epitaxy growth using band-edge thermometry [J].

Johnson, S ;

Kuo, CH ;

Boonzaayer, M ;

Braun, W ;

Koelle, U ;

Zhang, YH ;

Roth, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03) :1502-1506

[5] Effect of substrate thickness, back surface texture, reflectivity, and thin film interference on optical band-gap thermometry [J].

Johnson, SR ;

Tiedje, T .

JOURNAL OF CRYSTAL GROWTH, 1997, 175 :273-280

[6] SEMICONDUCTOR SUBSTRATE-TEMPERATURE MEASUREMENT BY DIFFUSE REFLECTANCE SPECTROSCOPY IN MOLECULAR-BEAM EPITAXY [J].

JOHNSON, SR ;

LAVOIE, C ;

TIEDJE, T ;

MACKENZIE, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03) :1007-1010

[7] Growth related interference effects in band edge thermometry of semiconductors [J].

Sacks, RN ;

Barlett, D ;

Taylor, CA ;

Williams, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (03) :1247-1251

[8] VARIATIONS IN SUBSTRATE-TEMPERATURE INDUCED BY MOLECULAR-BEAM EPITAXIAL-GROWTH ON RADIATIVELY HEATED SUBSTRATES [J].

SHANABROOK, BV ;

WATERMAN, JR ;

DAVIS, JL ;

WAGNER, RJ ;

KATZER, DS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03) :994-997

[9] Robust optical delivery system for measuring substrate temperature during molecular beam epitaxy [J].

Thibado, PM ;

Salamo, GJ ;

Baharav, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (01) :253-256

[10] Diffuse reflectance spectroscopy measurement of substrate temperature and temperature transient during molecular beam epitaxy and implications for low-temperature III-V epitaxy [J].

Thompson, P ;

Li, Y ;

Zhou, JJ ;

Sato, DL ;

Flanders, L ;

Lee, HP .

APPLIED PHYSICS LETTERS, 1997, 70 (12) :1605-1607