The effects of boron impurities on the atomic bonding and electronic structure of Ni3Al

被引:2
作者
Winarski, RP
Eskildsen, T
Stadler, S
van Ek, J
Ederer, DL
Kurmaev, EZ
Grush, MM
Callcott, TA
Moewes, A
Lee, M
机构
[1] Tulane Univ, Dept Phys, New Orleans, LA 70118 USA
[2] Russian Acad Sci, Inst Met Phys, Ural Div, Ekaterinburg 620219, Russia
[3] Univ Tennessee, Dept Phys, Knoxville, TN 37996 USA
[4] Louisiana State Univ, Ctr Adv Microstruct & Devices, Baton Rouge, LA 70803 USA
基金
美国能源部; 美国国家科学基金会; 俄罗斯基础研究基金会;
关键词
boron impurities; atomic bonding; electronic structure; Ni3Al;
D O I
10.1016/S0368-2048(00)00157-2
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
Tunable synchrotron radiation was used to examine the boron K-valence emission from boron doped Ni3Al (500 parts per million boron). When compared with electronic structure calculations these measurements yield information regarding the local bonding environment of the doped boron atoms within the alloy structure. Our measurements appear to suggest that the boron atoms preferentially bond with the nickel atoms in this material. It seems that the boron atoms prefer to occupy octahedral interstitial sites surrounded by six nickel atoms. This suggests that the enhancement in ductility observed in this alloy is due to the interplanar metallic bonding provided by the doped boron atoms. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:69 / 74
页数:6
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