GaN based LEDs grown by molecular beam epitaxy

被引：13

作者：

Grandjean, N ^{[1
]}

Massies, J ^{[1
]}

Lorenzini, P ^{[1
]}

Leroux, M ^{[1
]}

机构：

[1] Ctr Rech Hetero Epitaxie & Applicat, CNRS, F-06560 Valbonne, France

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 25期

关键词：

gallium nitride; molecular beam epitaxial growth;

D O I：

10.1049/el:19971447

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN based LEDs are grown on sapphire by MBE using NH3. The n- and p-type doping levels are 4x10(18) and 3x10(17) cm(-3), respectively. LEDs turn on at 3V, and the forward voltage is 3.7V at 20mA. The electroluminescence peaks at 390 nm.

引用

页码：2156 / 2157

页数：2

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