Etching morphology and symmetry of TeO2 crystal

被引：0

作者：

Fang, YK ^{[1
]}

Sang, WB ^{[1
]}

Min, JH ^{[1
]}

机构：

[1] Shanghai Univ, Dept Elect Informat Mat, Shanghai 201800, Peoples R China

来源：

JOURNAL OF INORGANIC MATERIALS | 2004年 / 19卷 / 06期

关键词：

TeO2; crystal; etching; dislocation; symmetry;

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The etching morphologies of TeO2 crystal on (110) and (001) faces were observed by means of chemical etching and analyzed with the theory of symmetry group. The morphologies of etch pits are very special compared with the tetragonal system crystal with 422 point group. The morphologies of etch pits by theoretical analysis are in conformity with the experiment. It shows that the patterns of etch pits consist of {110} planes. It is clear that the habitual plane of TeO2 crystal is {110} plane.

引用

页码：1419 / 1422

页数：4

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