Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®

被引：15

作者：

Martin, C.

Dauelsberg, M.

Protzmann, H.

Boyd, A. R.

Thrush, E. J.

Heuken, M.

Talalaev, R. A.

Yakovlev, E. V.

Kondratyev, A. V.

机构：

[1] AIXTRON AG, D-52072 Aachen, Germany

[2] Thomas Swan LTd, Cambridge CB4 5FQ, England

[3] Semicond Technol Res GmbH, D-91002 Erlangen, Germany

[4] Soft Impact Ltd, St Petersburg 194156, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 303卷 / 01期

关键词：

computer simulation; closed coupled showerhead reactor; metal organic vapor-phase epitaxy; Planetary Reactor (R); nitrides;

D O I：

10.1016/j.jcrysgro.2006.11.151

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The modelling and subsequent experimental validation of nitride growth processes in commercial, production scale multi-wafer reactors is investigated with focus on group-III nitride compounds GaN and InGaN. The paper also deals with the development of group-III nitride growth processes at elevated process pressures, highlighting the effects of gas-phase nucleation phenomena on the growth efficiency of GaN. In addition. the latest hardware and process improvements to the Planetary Reactor (R) technology are presented, with focus on the development using a modelling approach, of a new gas injector design for III-nitride growth. Subsequent experimental validation of the new injector design, and its flexibility to changing process regimes for GaN and InGaN will be demonstrated for the 42 x 2 '' Planetary Reactor (R). (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：318 / 322

页数：5

共 14 条

[11]

*STR GMBH, NITR CVD MOD

[12] Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy [J].