An in-house developed resettable MOSFET dosimeter for radiotherapy

被引:7
作者
Verellen, Dirk [1 ]
Van Vaerenbergh, Sven [1 ]
Tournel, Koen [1 ]
Heuninckx, Karina [1 ]
Joris, Laurent [1 ]
Duchateau, Michael [1 ]
Linthout, Nadine [1 ]
Gevaert, Thierry [1 ]
Reynders, Truus [1 ]
Van de Vondel, Iwein [1 ]
Coppens, Luc [1 ]
Depuydt, Tom [1 ]
De Ridder, Mark [1 ]
Storme, Guy [1 ]
机构
[1] UZ Brussel, Ctr Oncol, Brussels, Belgium
关键词
SYSTEM; DETECTORS; THERAPY;
D O I
10.1088/0031-9155/55/4/N01
中图分类号
R318 [生物医学工程];
学科分类号
0831 ;
摘要
The purpose of this note is to report the feasibility and clinical validation of an in-house developed MOSFET dosimetry system and describe an integrated non-destructive reset procedure. Off-the-shelf MOSFETs are connected to a common PC using an 18 bit/analogue-input and 16 bit/output data acquisition card. A reading algorithm was developed defining the zero-temperature-coefficient point (ZTC) to determine the threshold voltage. A wireless interface was established for ease of use. The reset procedure consists of an internal circuit generating a local heating induced by an electrical current. Sensitivity has been investigated as a function of bias voltage (0-9 V) to the gate. Dosimetric properties have been evaluated for 6 MV and 15 MV clinical photon beams and in vivo benchmarking was performed against thermoluminescence dosimeters (TLD) for conventional treatments (two groups of ten patients for each energy) and total body irradiation (TBI). MOSFETS were pre-irradiated with 20 Gy. Sensitivity of 0.08 mV cGy(-1) can be obtained for 200 cGy irradiations at 5 V bias voltage. Ten consecutive measurements at 200 cGy yield a SD of 2.08 cGy (1.05%). Increasing the dose in steps from 5 cGy to 1000 cGy yields a 1.00 Pearson correlation coefficient and agreement within 2.0%. Dose rate dependence (160-800 cGy min(-1)) was within 2.5%, temperature dependence within 2.0% (25-37 degrees C). A strong angular dependence has been observed for gantry incidences exceeding +/- 30 degrees C. Dose response is stable up to 50 Gy (saturation occurs at approximately 90 Gy), which is used as threshold dose before resetting the MOSFET. An average measured-over-calculated dose ratio within 1.05 (SD: 0.04) has been obtained in vivo. TBI midplane-dose assessed by entrance and exit dose measurements agreed within 1.9% with ionization chamber in phantom, and within 1.0% with TLD in vivo. An in-house developed resettable MOSFET-based dosimetry system is proposed. The system has been validated and is currently used for in vivo entrance dose measurement in clinical routine for simple (open field) treatment configurations.
引用
收藏
页码:N97 / N109
页数:13
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