机构:
Shanghai Normal Univ, Math & Sci Coll, Dept Phys, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Math & Sci Coll, Dept Phys, Shanghai 200234, Peoples R China
He, Xiaoyong
[1
]
Zhao, Zhen-Yu
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机构:
Shanghai Normal Univ, Math & Sci Coll, Dept Phys, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Math & Sci Coll, Dept Phys, Shanghai 200234, Peoples R China
Zhao, Zhen-Yu
[1
]
Shi, Wangzhou
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Shanghai Normal Univ, Math & Sci Coll, Dept Phys, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Math & Sci Coll, Dept Phys, Shanghai 200234, Peoples R China
Shi, Wangzhou
[1
]
机构:
[1] Shanghai Normal Univ, Math & Sci Coll, Dept Phys, Shanghai 200234, Peoples R China
By integrating the metallic metamaterials (MMs) with a graphene layer, the resonant properties of an active tunable device based on the metal-SiO2-graphene (MSiO(2)G) structure have been theoretically investigated in the near-IR spectral region. The results manifest that the influences of the graphene layer on the propagation properties are significant. Owing to the tunability of the Fermi level of graphene, the resonance of transmitted or reflected curves can be tuned in a wide range (160-193 THz). To an original metal unit cell structure, an elevated Fermi level of graphene layer enhances the resonance dips and shifts it to the higher frequency. Compared with the original structure, the corresponding complementary MMs structure shows a much sharper spectral curve and can be used to fabricate a switcher or filters. The results are very helpful for designing graphene plasmonic devices. (C) 2015 Optical Society of America
机构:
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USAPurdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Emani, Naresh K.
;
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机构:
Chung, Ting-Fung
;
Kildishev, Alexander V.
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USAPurdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Kildishev, Alexander V.
;
Shalaev, Vladimir M.
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USAPurdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Shalaev, Vladimir M.
;
Chen, Yong P.
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USAPurdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
机构:
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USAPurdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Emani, Naresh K.
;
论文数: 引用数:
h-index:
机构:
Chung, Ting-Fung
;
Kildishev, Alexander V.
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USAPurdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Kildishev, Alexander V.
;
Shalaev, Vladimir M.
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USAPurdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Shalaev, Vladimir M.
;
Chen, Yong P.
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USAPurdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA