Synthesis of aluminum nitride thin films by filtered arc ion plating deposition

被引：6
|
作者：
Yan, Xubo [1 ]
Dong, Yuliang [1 ]
Li, Haiqing [1 ]
Gong, Jun [1 ]
Sun, Chao [1 ]
机构：
[1] Chinese Acad Sci, Inst Met Res, State Key Lab Corros & Protect, Shenyang 110016, Peoples R China
来源：
MATERIALS LETTERS | 2010年 / 64卷 / 11期
关键词：
Filtered arc ion plating; Aluminum nitride; Thin films; Microstructure; Deposition rate; Transmittance; GROWTH; ALN;
D O I：
10.1016/j.matlet.2010.03.003
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin films of aluminum nitride (AlN) were deposited on stainless steel and glass substrates by a modified deposition technique, filtered arc ion plating, at an enhanced deposition rate. X-ray diffraction spectra confirmed the exclusive presence of AlN hexagonal wurtzite phase. Under a mixed gas (Ar + N-2) pressure of 0.90 Pa and a bias voltage of -400 V. the deposited films exhibited a fairly low surface roughness of 2.23 nm. The thin films were proved higher than 75% transparent in the visible spectral region. The bonding strength between the film and substrate was verified higher than 20 N. Thus high performance of such AlN thin films can be expected in applications. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：1261 / 1263
页数：3
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