Carrier density evaluation in p-type SiC by Raman scattering

被引：26

作者：

Harima, H

Hosoda, T

Nakashima, S

机构：

[1] Osaka Univ, Dept Appl Phys, Suita, Osaka 5650871, Japan

[2] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 8892192, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

coupled mode; Fano interference; hole concentration; LO phonon; plasmon; p-type SiC; Raman scattering;

D O I：

10.4028/www.scientific.net/MSF.338-342.607

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Raman scattering spectra for p-type 6H-SiC bulk crystals have been measured in detail for various carrier concentrations. The spectra show very different features as compared with those for n-type materials: (i) The LO-phonon mode shows no frequency shift due to coupling with plasma oscillation of free carriers. (ii) A continuum band due to inter-valence-band transition clearly appears in the low frequency region, together with Fano interference features on sharp phonon lines. It is proposed that the continuum-band intensity and the Fano interference parameters can be conveniently used as a measure of free carrier concentration in p-type SiC.

引用

页码：607 / 610

页数：4

共 6 条

[1] EFFECT OF FREE CARRIERS ON ZONE-CENTER VIBRATIONAL MODES IN HEAVILY DOPED P-TYPE SI .2. OPTICAL MODES [J].